DFB2580 datasheet, PDF - EEWORLD Datasheet

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DFB2580: Description25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size341KB，5 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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DFB2580 Overview

25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

DFB2580 Parametric

Parameter Name	Attribute value
Brand Name	Fairchild Semiconduc
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TS6P
package instruction	GREEN, PLASTIC, TS-6P, 4 PIN
Contacts	4
Manufacturer packaging code	4LD, TS6P, THROUGH-HOLE, MOLDED PACKAGE
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	800 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PSFM-T4
JESD-609 code	e3
Maximum non-repetitive peak forward current	350 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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DFB2505 - DFB25100 — Glass Passivated Bridge Rectifiers

March 2011

DFB2505 - DFB25100

Glass Passivated Bridge Rectifiers

Features

•

UL certificate # E326243

Glass passivated junction

Ideal for printed circuit board

Reliable low cost construction

Plastic material has Underwriters Laboratory Flammability Classification 94V-0

Surge overload rating to 350 amperes peak

High case dielectric strength of 2500 V

RMS

Isolated voltage from case to lead over 2500 volts

+ ~

TS-6P

Absolute Maximum Ratings*

Symbol

Parameter

= 25°C unless otherwise noted

Value

DFB25 DFB25 DFB25 DFB25 DFB25 DFB25 DFB25

Units

05***

10***

20***

80*** 100***

100

200

140

200

400

280

400

350

-55 to +150

600

420

600

800

560

800

1000

700

1000

°C/W

°C

RRM

RMS

(AV)

FSM

θJC

STG

Maximum

Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum

Average Forward Rectified Current

Peak Forward Surge Current

(8.3mS Single Half-wave)

Typical Thermal Resistance**

Operating Temperature Range

Storage Temperature Range

* Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%

** Device mounted on 4" x 6" x 0.25" Al-plate heat sink.

*** In development. Please contact Fairchild Semiconductor for more information.

Electrical Characteristics

Symbol

= 25°C unless otherwise specified

Parameter

Maximum

Instantaneous Forward Voltage

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Rating for fusing (t < 8.3mS)

Typical Junction Capacitance per leg*

Test condition

@ 12.5A

@ 25A

@ T

= 25°C

@ T

= 125°C

Value

1.0

1.1

500

508

110

Unit

μA

* Measured at 1MHz and applied Reverse bias of 4.0V DC.

DFB2505 - DFB25100 Rev. A4

www.fairchildsemi.com

DFB2580 Related Products

	DFB2580	DFB2520	DFB2560
Description	25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Brand Name	Fairchild Semiconduc	Fairchild Semiconduc	Fairchild Semiconduc
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Parts packaging code	TS6P	TS6P	TS6P
package instruction	GREEN, PLASTIC, TS-6P, 4 PIN	GREEN, PLASTIC, TS-6P, 4 PIN	GREEN, PLASTIC, TS-6P, 4 PIN
Contacts	4	4	4
Manufacturer packaging code	4LD, TS6P, THROUGH-HOLE, MOLDED PACKAGE	4LD, TS6P, THROUGH-HOLE, MOLDED PACKAGE	4LD, TS6P, THROUGH-HOLE, MOLDED PACKAGE
Reach Compliance Code	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	800 V	200 V	600 V
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V
JESD-30 code	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
JESD-609 code	e3	e3	e3
Maximum non-repetitive peak forward current	350 A	350 A	350 A
Number of components	4	4	4
Phase	1	1	1
Number of terminals	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
Maximum output current	25 A	25 A	25 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	800 V	200 V	600 V
surface mount	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1

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