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DF02M: Description1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size30KB，2 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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DF02M Overview

1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

DF02M Parametric

Parameter Name	Attribute value
Brand Name	Fairchild Semiconductor
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	DIP
package instruction	DIP-4
Contacts	4
Manufacturer packaging code	4LDS, DIP, .6.5MM WIDE
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	LOW LEAKAGE, UL RECOGNIZED
Minimum breakdown voltage	200 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PDIP-T4
JESD-609 code	e3
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	3.1 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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DF02M Related Products

	DF02M	DF005M_10	DF08M	DF10M
Description	1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),DIP
Diode component materials	SILICON	silicon	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	bridge rectifier diode	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A
Number of components	4	4	4	4
Phase	1	1	1	1
Number of terminals	4	4	4	4
Maximum repetitive peak reverse voltage	200 V	400 V	800 V	1000 V
Terminal form	THROUGH-HOLE	THROUGH-hole	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	pair	DUAL	DUAL
Brand Name	Fairchild Semiconductor	-	Fairchild Semiconductor	Fairchild Semiconduc
Is it lead-free?	Lead free	-	Lead free	Lead free
Is it Rohs certified?	conform to	-	conform to	conform to
Parts packaging code	DIP	-	DIP	DIP
package instruction	DIP-4	-	DIP-4	DIP-4
Contacts	4	-	4	4
Manufacturer packaging code	4LDS, DIP, .6.5MM WIDE	-	4LDS, DIP, .6.5MM WIDE	4LDS, DIP, .6.5MM WIDE
Reach Compliance Code	not_compliant	-	not_compliant	_compli
ECCN code	EAR99	-	EAR99	EAR99
Other features	LOW LEAKAGE, UL RECOGNIZED	-	LOW LEAKAGE, UL RECOGNIZED	LOW LEAKAGE, UL RECOGNIZED
Minimum breakdown voltage	200 V	-	800 V	1000 V
Configuration	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Maximum forward voltage (VF)	1.1 V	-	1.1 V	1.1 V
JESD-30 code	R-PDIP-T4	-	R-PDIP-T4	R-PDIP-T4
JESD-609 code	e3	-	e3	e3
Maximum operating temperature	150 °C	-	150 °C	150 °C
Minimum operating temperature	-55 °C	-	-55 °C	-55 °C
Maximum output current	1.5 A	-	1.5 A	1.5 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Maximum power dissipation	3.1 W	-	3.1 W	3.1 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified
surface mount	NO	-	NO	NO
Terminal surface	Matte Tin (Sn)	-	Matte Tin (Sn)	Matte Tin (Sn)
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	-	1	1

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