FNA40860/B2 Smart Power Module
October 2010
FNA40860/B2
Smart Power Module
Features
• 600V-8A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection
• Easy PCB layout due to built-in bootstrap diode and V
S
out-
put
• Divided negative dc-link terminals for inverter current sensing
applications
• Single-grounded power supply due to built-in HVIC
• Built-in thermistor for over-temperature monitoring
• Isolation rating of 2000Vrms/min.
Motion-SPM
General Description
TM
Applications
• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
• Home appliances applications like air conditioner and refrig-
erator
It is an advanced motion-smart power module (Motion-SPM
TM
)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly tar-
geting low-power inverter-driven application like air conditioner
and refrigerator. It combines optimized circuit protection and
drive matched to low-loss IGBTs. System reliability is further
enhanced by the integrated under-voltage lock-out protection,
short-circuit protection, and temperature monitoring. The high
speed built-in HVIC provides opto-coupler-less single-supply
IGBT gate driving capability that further reduce the overall size
of the inverter system design. Each phase current of inverter
can be monitored separately due to the divided negative dc ter-
minals.
Additional Information
For further infomation, please see AN-9070 and FEB305-001 in
http://www.fairchildsemi.com
Figure 1.
©2010 Fairchild Semiconductor Corporation
1
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FNA40860/B2 Rev. C
FNA40860/B2 Smart Power Module
Integrated Power Functions
• 600V-8A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to UV (Low-side supply) and SC faults
• Input interface: 3.3/5V CMOS compatible, Schmitt trigger input
Pin Configuration
Top View
V
B(U)
(26)
V
TH
(1)
R
TH
(2)
V
S(U)
(25)
V
B(V)
(24)
V
S(V)
(23)
P(3)
V
B(W)
(22)
V
S(W)
(21)
U(4)
Case Temperature (T
C
)
Detecting Point
V(5)
IN
(UH)
(20)
IN
(VH)
(19)
IN
(WH)
(18)
V
CC(H)
(17)
V
CC(L)
(16)
COM(15)
IN
(UL)
(14)
N
U
(7)
N
V
(8)
N
W
(9)
IN
(VL)
(13)
IN
(WL)
(12)
V
FO
(11)
C
SC
(10)
W(6)
Figure 2.
FNA40860/B2 Rev. C
2
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FNA40860/B2 Smart Power Module
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Pin Name
V
TH
R
TH
P
U
V
W
N
U
N
V
N
W
C
SC
V
FO
IN
(WL)
IN
(VL)
IN
(UL)
COM
V
CC(L)
V
CC(H)
IN
(WH)
IN
(VH)
IN
(UH)
V
S(W)
V
B(W)
V
S(V)
V
B(V)
V
S(U)
V
B(U)
Thermistor Bias Voltage
Pin Description
Series Resistor for the Use of Thermistor (Temperature Detection)
Positive DC–Link Input
Output for U Phase
Output for V Phase
Output for W Phase
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Capacitor (Low-pass Filter) for Short-Current Detection Input
Fault Output
Signal Input for Low-side W Phase
Signal Input for Low-side V Phase
Signal Input for Low-side U Phase
Common Supply Ground
Low-Side Common Bias Voltage for IC and IGBTs Driving
High-Side Common Bias Voltage for IC and IGBTs Driving
Signal Input for High-side W Phase
Signal Input for High-side V Phase
Signal Input for High-side U Phase
High-side Bias Voltage Ground for W Phase IGBT Driving
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
High-side Bias Voltage for U Phase IGBT Driving
FNA40860/B2 Rev. C
3
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FNA40860/B2 Smart Power Module
Internal Equivalent Circuit and Input/Output Pins
V
TH
(1)
Thermister
R
TH
(2)
P (3)
(26) V
B(U)
(25) V
S(U)
(24) V
B(V)
(23) V
S(V)
(22) V
B(W)
(21) V
S(W)
(20) IN
(UH)
(19) IN
(VH)
(18) IN
(WH)
(17) V
CC(H)
UVB
UVS
VVB
VVS
WVB
WVS
IN(UH)
IN(VH)
IN(WH)
VCC
COM
OUT(WH)
WVS
W(6)
OUT(UH)
UVS
U(4)
OUT(VH)
VVS
V (5)
(16) V
CC(L)
(15) COM
(14) IN
(UL)
(13) IN
(VL)
(12) IN
(WL)
(11) V
FO
VCC
OUT(UL)
COM
IN(UL)
IN(VL)
IN(WL)
VFO
C(SC)
OUT(VL)
N
V
(8)
N
U
(7)
(10) C
SC
OUT(WL)
N
W
(9)
Note:
1) Inverter high-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT.
2) Inverter low-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. It has gate drive and protection functions.
3) Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
Figure 3.
FNA40860/B2 Rev. C
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FNA40860/B2 Smart Power Module
Absolute Maximum Ratings
(T
J
= 25°C,
Inverter Part
Symbol
V
PN
V
PN(Surge)
V
CES
± I
C
± I
CP
P
C
T
J
Note:
Unless Otherwise Specified)
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
Conditions
Applied between P- N
U
, N
V
, N
W
Applied between P- N
U
, N
V
, N
W
T
C
= 25°C, T
J
＜
150°C
T
C
= 25°C, T
J
＜
150°C, Under 1ms Pulse
Width
T
C
= 25°C per One Chip
(Note 1)
Rating
450
500
600
8
16
32
-40 ~ 150
Units
V
V
V
A
A
W
°C
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C.
Control Part
Symbol
V
CC
V
BS
V
IN
V
FO
I
FO
V
SC
Parameter
Control Supply Voltage
High-side Control Bias
Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Conditions
Applied between V
CC(H)
, V
CC(L)
- COM
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
,
V
B(W)
- V
S(W)
Rating
20
20
Units
V
V
V
V
mA
V
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, -0.3~V
CC
+0.3
IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
Applied between V
FO
- COM
Sink Current at V
FO
Pin
Applied between C
SC
- COM
-0.3~V
CC
+0.3
1
-0.3~V
CC
+0.3
Bootstrap Diode Part
Symbol
V
RRM
I
F
I
FP
T
J
Parameter
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
Operating Junction Temperature
T
C
= 25°C
Conditions
Rating
600
0.5
1
-40 ~ 150
Units
V
A
A
°C
T
C
= 25°C, Under 1ms Pulse Width
Total System
Symbol
V
PN(PROT)
T
STG
V
ISO
Parameter
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
Storage Temperature
Isolation Voltage
Conditions
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 150°C, Non-repetitive, less than 2ms
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to heat sink plate
Rating
400
-40 ~ 125
2000
Units
V
°C
V
rms
Thermal Resistance
Symbol
R
th(j-c)Q
R
th(j-c)F
Note:
2. For the measurement point of case temperature(T
C
), please refer to Figure 2.
Parameter
Junction to Case Thermal
Resistance
Conditions
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Min.
-
-
Typ. Max. Units
-
-
3.8
4.8
°C/W
°C/W
FNA40860/B2 Rev. C
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