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Datasheet> All Categories > Discrete semiconductor> diode> KDV804SD
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KDV804SD

Description
Variable Capacitance Diode, 45.75pF C(T), Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size352KB，2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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KDV804SD Overview

Variable Capacitance Diode, 45.75pF C(T), Silicon, SOT-23, 3 PIN

KDV804SD Parametric

Parameter NameAttribute value
MakerKEC
Parts packaging codeSOT-23
package instructionSOT-23, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance1.64%
Minimum diode capacitance ratio1.65
Nominal diode capacitance45.75 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL

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Download Datasheet
SEMICONDUCTOR
TECHNICAL DATA
TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL
CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO.
KDV804M/S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
FEATURES
・Low
Series Resistance : rs=0.3(TYP.).
・Small
Package : SOT-23.
H
M
A
O
C
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
V
R
T
j
T
stg
RATING
15
150
-55½150
UNIT
J
E
E
V
℃
℃
1
L
2
3
N
DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
_
D
2.40 + 0.15
E
1.27
F
2.30
_
G
14.00+ 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
0.80
M
N
0.55 MAX
O
0.75
F
1. ANODE 1
2. CATHODE 1, 2
3. ANODE 2
1
2
3
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
A
B
C
D
E
CAPACITANCE(C
2V
)
42½43.5
43½44.5
44½45.5
45½46.5
2
A
K
UNIT
D
G
TO-92M
L
E
B
L
pF
D
3
46½47.5
1
Q
P
P
Grade
K
Lot No.
M
J
Marking
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
G
C
N
H
3
Type Name
K3
1. ANODE 1
2. ANODE 2
3. CATHODE
2
1
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Reverse Voltage
Reverse Current
Capacitance
C
8V
Capacitance Ratio
Series Resistance
C
2V
/C
8V
r
S
C=38pF, f=100MHz
V
R
=8V, f=1MHz
24
1.65
-
-
-
0.3
28.8
1.8
0.4
Ω
SYMBOL
V
R
I
R
C
2V
TEST CONDITION
I
R
=10μ
A
V
R
=15V
V
R
=2V, f=1MHz
MIN.
15
-
42
TYP.
-
-
-
MAX.
-
50
47.5
pF
UNIT
V
nA
1998. 6. 15
Revision No : 1
1/2

KDV804SD Related Products

KDV804SD KDV804SB KDV804SA KDV804SC KDV804MB KDV804SE KDV804MD KDV804MA KDV804ME KDV804MC
Description Variable Capacitance Diode, 45.75pF C(T), Silicon, SOT-23, 3 PIN Variable Capacitance Diode, 43.75pF C(T), Silicon, SOT-23, 3 PIN Variable Capacitance Diode, 42.75pF C(T), Silicon, SOT-23, 3 PIN Variable Capacitance Diode, 44.75pF C(T), Silicon, SOT-23, 3 PIN Variable Capacitance Diode, 43.75pF C(T), Silicon, TO-92M, 3 PIN Variable Capacitance Diode, 46.75pF C(T), Silicon, SOT-23, 3 PIN Variable Capacitance Diode, 45.75pF C(T), Silicon, TO-92M, 3 PIN Variable Capacitance Diode, 42.75pF C(T), Silicon, TO-92M, 3 PIN Variable Capacitance Diode, 46.75pF C(T), Silicon, TO-92M, 3 PIN Variable Capacitance Diode, 44.75pF C(T), Silicon, TO-92M, 3 PIN
Maker KEC KEC KEC KEC KEC KEC KEC KEC KEC KEC
Parts packaging code SOT-23 SOT-23 SOT-23 SOT-23 TO-92M SOT-23 TO-92M TO-92M TO-92M TO-92M
package instruction SOT-23, 3 PIN SOT-23, 3 PIN SOT-23, 3 PIN SOT-23, 3 PIN R-PSIP-T3 SOT-23, 3 PIN R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Contacts 3 3 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance 1.64% 1.71% 1.75% 1.68% 1.71% 1.6% 1.64% 1.75% 1.6% 1.68%
Minimum diode capacitance ratio 1.65 1.65 1.65 1.65 1.65 1.65 1.65 1.65 1.65 1.65
Nominal diode capacitance 45.75 pF 43.75 pF 42.75 pF 44.75 pF 43.75 pF 46.75 pF 45.75 pF 42.75 pF 46.75 pF 44.75 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PSIP-T3 R-PDSO-G3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 2 2 2 2 2 2 2 2 2 2
Number of terminals 3 3 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE IN-LINE IN-LINE IN-LINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES NO YES NO NO NO NO
Terminal form GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL SINGLE DUAL SINGLE SINGLE SINGLE SINGLE

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