KDV804MC datasheet, PDF - EEWORLD Datasheet

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KDV804MC: DescriptionVariable Capacitance Diode, 44.75pF C(T), Silicon, TO-92M, 3 PIN; CategoryDiscrete semiconductor diode; File Size352KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KDV804MC Overview

Variable Capacitance Diode, 44.75pF C(T), Silicon, TO-92M, 3 PIN

KDV804MC Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92M
package instruction	R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance	1.68%
Minimum diode capacitance ratio	1.65
Nominal diode capacitance	44.75 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	R-PSIP-T3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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SEMICONDUCTOR

TECHNICAL DATA

TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL

CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO.

KDV804M/S

VARIABLE CAPACITANCE DIODE

SILICON EPITAXIAL PLANAR DIODE

FEATURES

・Low

Series Resistance : rs=0.3(TYP.).

・Small

Package : SOT-23.

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Reverse Voltage

Junction Temperature

Storage Temperature Range

SYMBOL

stg

RATING

150

-55½150

UNIT

℃

DIM MILLIMETERS

3.20 MAX

4.30 MAX

0.55 MAX

2.40 + 0.15

1.27

2.30

14.00+ 0.50

0.60 MAX

1.05

1.45

0.80

0.55 MAX

0.75

1. ANODE 1

2. CATHODE 1, 2

3. ANODE 2

CLASSIFICATION OF CAPACITANCE RATIO GRADE

GRADE

CAPACITANCE(C

)

42½43.5

43½44.5

44½45.5

45½46.5

UNIT

TO-92M

46½47.5

Grade

Lot No.

Marking

DIM

MILLIMETERS

2.93 + 0.20

1.30+0.20/-0.15

1.30 MAX

0.40+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

0.1 MAX

Type Name

1. ANODE 1

2. ANODE 2

3. CATHODE

SOT-23

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Reverse Voltage

Reverse Current

Capacitance

Capacitance Ratio

Series Resistance

C=38pF, f=100MHz

=8V, f=1MHz

1.65

0.3

28.8

1.8

0.4

Ω

SYMBOL

TEST CONDITION

=10μ

=15V

=2V, f=1MHz

MIN.

TYP.

MAX.

47.5

UNIT

1998. 6. 15

Revision No : 1

1/2

KDV804MC Related Products

	KDV804MC	KDV804SB	KDV804SA	KDV804SC	KDV804MB	KDV804SE	KDV804MD	KDV804MA	KDV804ME	KDV804SD
Description	Variable Capacitance Diode, 44.75pF C(T), Silicon, TO-92M, 3 PIN	Variable Capacitance Diode, 43.75pF C(T), Silicon, SOT-23, 3 PIN	Variable Capacitance Diode, 42.75pF C(T), Silicon, SOT-23, 3 PIN	Variable Capacitance Diode, 44.75pF C(T), Silicon, SOT-23, 3 PIN	Variable Capacitance Diode, 43.75pF C(T), Silicon, TO-92M, 3 PIN	Variable Capacitance Diode, 46.75pF C(T), Silicon, SOT-23, 3 PIN	Variable Capacitance Diode, 45.75pF C(T), Silicon, TO-92M, 3 PIN	Variable Capacitance Diode, 42.75pF C(T), Silicon, TO-92M, 3 PIN	Variable Capacitance Diode, 46.75pF C(T), Silicon, TO-92M, 3 PIN	Variable Capacitance Diode, 45.75pF C(T), Silicon, SOT-23, 3 PIN
Maker	KEC	KEC	KEC	KEC	KEC	KEC	KEC	KEC	KEC	KEC
Parts packaging code	TO-92M	SOT-23	SOT-23	SOT-23	TO-92M	SOT-23	TO-92M	TO-92M	TO-92M	SOT-23
package instruction	R-PSIP-T3	SOT-23, 3 PIN	SOT-23, 3 PIN	SOT-23, 3 PIN	R-PSIP-T3	SOT-23, 3 PIN	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	SOT-23, 3 PIN
Contacts	3	3	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance	1.68%	1.71%	1.75%	1.68%	1.71%	1.6%	1.64%	1.75%	1.6%	1.64%
Minimum diode capacitance ratio	1.65	1.65	1.65	1.65	1.65	1.65	1.65	1.65	1.65	1.65
Nominal diode capacitance	44.75 pF	43.75 pF	42.75 pF	44.75 pF	43.75 pF	46.75 pF	45.75 pF	42.75 pF	46.75 pF	45.75 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
JESD-30 code	R-PSIP-T3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PSIP-T3	R-PDSO-G3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PDSO-G3
Number of components	2	2	2	2	2	2	2	2	2	2
Number of terminals	3	3	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES	YES	NO	YES	NO	NO	NO	YES
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	DUAL	DUAL	DUAL	SINGLE	DUAL	SINGLE	SINGLE	SINGLE	DUAL

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