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BUK764R0-75C_15

Description
N-channel TrenchMOS standard level FET
File Size178KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BUK764R0-75C_15 Overview

N-channel TrenchMOS standard level FET

D2
PA
K
BUK764R0-75C
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC-Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment due to 175 °C rating
1.3 Applications
12 V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain current
total power
dissipation
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
[1][2]
Min
-
-
-
Typ
-
-
-
Max
75
100
333
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
175 °C
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