BAS16...
Silicon Switching Diode
•
For high-speed switching applications
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAS16
BAS16W
BAS16-02L
BAS16-02V
BAS16-02W
BAS16-03W
BAS16S
BAS16U
BAS16-07L4
!
$
#
"
"
, !
!
,
,
,
,
!
Type
BAS16
BAS16-02L*
BAS16-02V
BAS16-02W
BAS16-03W
BAS16-07L4*
BAS16S
BAS16U
BAS16W
* Preliminary Data
1
Pb-containing
Package
SOT23
TSLP-2-1
SC79
SCD80
SOD323
TSLP-4-4
SOT363
SC74
SOT323
Configuration
single
single, leadless
single
single
single
parallel pair, leadless
parallel triple
parallel triple
single
Marking
A6s
A6
6
A6
white B
6A
A6s
A6s
A6s
package may be available upon special request
1
2009-09-28
BAS16...
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
BAS16
BAS16-02L, -07L4
BAS16-02V, -02W
BAS16-03W
BAS16S
BAS16U
BAS16W
Non-repetitive peak surge forward current
t
= 1 µs, BAS16/ S/ U/ W/ -03W
t
= 1 µs, BAS16-02L/ -02V/ -02W/ -07L4
t
=1s
Total power dissipation
BAS16,
T
S
≤
54 °C
BAS16-02L, -07L4,
T
S
≤
130 °C
BAS16-02V, -02W,
T
S
≤
120 °C
BAS16-03W,
T
S
≤
116 °C
BAS16S,
T
S
≤
85 °C
BAS16U,
T
S
≤
113 °C
BAS16W,
T
S
≤
119 °C
Junction temperature
Storage temperature
T
j
T
stg
P
tot
370
250
250
250
250
250
250
150
-65 ...150
°C
I
FSM
4.5
2.5
0.5
mW
Symbol
V
R
V
RM
I
F
250
200
200
250
200
200
250
A
Value
80
85
mA
Unit
V
2
2009-09-28
BAS16...
Thermal Resistance
Parameter
Junction - soldering point
1)
BAS16, BAS16S
BAS16-02L, -07L4
BAS16-02V, -02W
BAS16-03W
BAS16U
BAS16W
Symbol
R
thJS
Value
≤
260
≤
80
≤
120
≤
135
≤
150
≤
125
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
85
-
-
V
Breakdown voltage
V
(BR)
I
(BR)
= 100 µA
Reverse current
V
R
= 75 V
V
R
= 25 V,
T
A
= 150 °C
V
R
= 75 V,
T
A
= 150 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
Forward recovery voltage
I
F
= 10 mA,
t
P
= 20 ns
1
For
I
R
-
-
-
V
F
-
-
-
-
-
V
fr
-
-
-
-
-
-
-
715
855
1000
1200
1250
1.75
-
-
-
1
30
50
µA
mV
V
calculation of
R
thJA
please refer to Application Note Thermal Resistance
3
2009-09-28
BAS16...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
-
-
2
pF
Diode capacitance
C
T
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured at
I
R
= 1mA ,
R
L
= 100
Ω
Test circuit for reverse recovery time
D.U.T.
t
rr
-
-
4
ns
Pulse generator:
t
p
= 100ns,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph
Ι
F
Oscillograph:
R
= 50Ω,
t
r
= 0.35ns,
C
= 0.05pF
EHN00017
4
2009-09-28
BAS16...
Reverse current
I
R
=
ƒ
(T
A
)
V
R
= Parameter
10
5
nA
Forward Voltage
V
F
=
ƒ
(T
A
)
I
F
= Parameter
BAS 16
EHB00025
1.0
V
F
10
4
V
Ι
F
= 100 mA
I
R
10 mA
10
3
0.5
70 V
25 V
1 mA
0.1 mA
10
2
10
1
0
25
50
75
100
°C
150
0
0
50
100
C
T
A
150
T
A
Forward current
I
F
=
ƒ
(V
F
)
T
A
= 25°C
Forward current
I
F
=
ƒ
(T
S
)
BAS16
300
150
BAS 16
EHB00023
Ι
F
mA
mA
I
F
typ
max
150
100
50
0
0
100
200
50
0
0
0.5
1.0
V
V
F
1.5
15
30
45
60
75
90 105 120
°C
150
T
S
5
2009-09-28
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