CGY41
HiRel
L- and S-Band GaAs General Purpose Amplifier
HiRel
Discrete and Microwave Semiconductor
Single-stage monolithic microwave IC
(MMIC-amplifier )
Application range: 100 MHz to 3 GHz
Gain: 9.5 dB typ. @ 1.8 GHz
Low noise figure: 2.7 dB typ. @ 1.8 GHz
Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1
*
Operating voltage range: 3 to 5.5 V
Input and output matched to 50
Individual current control with neg. gate bias
Hermetically sealed ceramic package micro-x
ESD:
Electrostatic discharge
sensitive device,
observe handling precautions!
4
3
1
2
Type
Marking
Ordering Code Circuit Diagram
(Pin Configuration)
Package
CGY41 (ql)
-
see below
Micro-X
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
on request
on request
on request
(see order instructions for ordering example)
IFAG IMM RPD D
1 of 6
Target DATASHEET
CGY41
Maximum ratings
Drain-voltage
Gate-voltage
Drain-gate voltage
RF Input power
1)
Channel temperature
Storage temperature range
Total power dissipation (T
S
< 82°C)
Thermal resistance
Channel-soldering point
2)
2)
Symbol
V
D
V
G
V
DG
P
RF
IN
T
Ch
T
stg
P
tot
Value
5.5
-4 ... 0.5
9.5
16
175
-55...+175
440
Unit
V
V
V
dBm
°C
°C
mW
R
thChS
160
K/W
Notes:
Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate
handling is required to protect the electrostatic sensitive MMIC against degradation due to excess
voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required
to achieve the guaranteed RF performance, stable operating conditions and adequate cooling.
1) @ V
D
> 4.5 V derating required.
2) Ts is measured on the source lead at the soldering point to the PCB.
IFAG IMM RPD D
2 of 6
Target DATASHEET
CGY41
Electrical Characteristics
T
A
= 25 °C,
V
G
= 0 V,
V
D
= 4.5 V,
R
S
= R
L
= 50 Ω unless otherwise specified
(for application circuit see next page)
Characteristics
Drain current
Symbol
I
DSS
G
9.5
8.5
GF
-
-
F
-
-
RL
IN
-
-
RL
OUT
-
-
IP3
31
32
-
12
12
-
9.5
dBm
13
12
-
9.5
dB
2.5
2.7
-
4.0
dB
0.4
1.1
-
2
dB
10.5
9.5
13
11
dB
min
40
typ
60
max
80
Unit
mA
Power gain
f = 200 MHz
f = 1800 MHz
Gain flatness
f = 200 to 1000 MHz
f = 800 to 1800 MHz
Noise figure
f = 200 to 1000 MHz
f = 800 to 1800 MHz
Input return loss
f = 200 to 1000 MHz
f = 800 to 1800 MHz
Output return loss
f = 200 to 1000 MHz
f = 800 to 1800 MHz
Third order intercept point
Two tone intermodulation test
f
1
= 806 MHz, f
2
= 810 MHz
P
0
= 10 dBm ( both carriers )
1dB gain compression
f = 200 to 1800 MHz
dB
P
1 dB
-
18
-
dBm
IFAG IMM RPD D
3 of 6
Target DATASHEET
CGY41
Application Circuit
( f = 800 to 1800 MHz )
V
V
G
C
3
L
Input
50Ohm
C1
L
1
4
2
2
3
D
D
L
3
C
1
2
C
4
Output
50Ohm
CGY41
50 Ohm Microstripline
Legend of components
C
1
, C
2
C
3
, C
4
L
1
L
2
, L
3
D
Chip capacitors 100 pF
Chip capacitors 1 nF
For optimized input matching
- discrete inductor: approx. 3nH, or
- printed microstripline inductor: Z approx. 100
l
e
approx. 5 mm
- discrete inductor: approx. 40 nH, as e.g. 5 turns 0.25 mm copper
wire on nylon rod with M3-thread, or
- printed microstripline inductor
Z diode 5.6 V ( type BZW 22 C5 V 6 )
IFAG IMM RPD D
4 of 6
Target DATASHEET
CGY41
Total Power Dissipation P
tot
= f (T
S
;T
A
)
500
P
tot
[ mW ]
400
300
T
S
T
A
200
100
0
0
150
50
100
T
A
; T
S
[ °C ]
IFAG IMM RPD D
5 of 6
Target DATASHEET
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