BFX81DCSM-JQR-B datasheet, PDF

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BFX81DCSM-JQR-B: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BFX81DCSM-JQR-B Overview

Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6

BFX81DCSM-JQR-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	SMALL OUTLINE, R-CDSO-N6
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	20 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	25
JEDEC-95 code	MO-041BB
JESD-30 code	R-CDSO-N6
Number of components	2
Number of terminals	6
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN AND PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	350 MHz

BFX81DCSM-JQR-B Preview

BFX81DCSM

Dimensions in mm (inches).

2.29 ± 0.20

(0.09 ± 0.008)

1.65 ± 0.13

(0.065 ± 0.005)

1.40 ± 0.15

(0.055 ± 0.006)

0.64 ± 0.06

(0.025 ± 0.003)

Dual Bipolar N/P Devices in a

hermetically sealed

LCC2 Ceramic Surface Mount

Package for High Reliability

Applications

4.32 ± 0.13

(0.170 ± 0.005)

2.54 ± 0.13

(0.10 ± 0.005)

2

1

A

3

4

5

Dual Bipolar N/P Devices.

V

CEO

= 20V

I

C

= 0.2A

All Semelab hermetically sealed products can

be processed in accordance with the

requirements of BS, CECC and JAN, JANTX,

JANTXV and JANS specifications.

6

0.23 rad.

(0.009)

A = 1.27 ± 0.13

(0.05 ± 0.005)

6.22 ± 0.13

(0.245 ± 0.005)

LCC2 (MO-041BB)

Pinouts

Pin 1 – Collector 1

Pin 2 – Base 1

Pin 3 – Base 2

Pin 4 – Collector 2

Pin 5 – Emitter 2

Pin 6 – Emitter 1

Parameter

V

CEO

*

I

C(CONT)

h

FE

f

t

P

D

Test Conditions

Min.

Typ.

Max.

20

0.2

Units

V

A

-

@ 1/0.1 (V

CE

/ I

C

)

25

350M

0.5

Hz

W

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

2-Aug-02

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BFX81DCSM-JQR-B Related Products

	BFX81DCSM-JQR-B	BFX81DCSM-JQR-A	BFX81DCSM-JQR	BFX81DCSMG4	BFX81DCSM
Description	Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6	Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6	Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6	Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6	Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6
Is it Rohs certified?	incompatible	incompatible	incompatible	conform to	conform to
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	SMALL OUTLINE, R-CDSO-N6	SMALL OUTLINE, R-CDSO-N6	SMALL OUTLINE, R-CDSO-N6	SMALL OUTLINE, R-CDSO-N6	HERMETIC SEALED, CERAMIC, LCC2-6
Reach Compliance Code	compliant	compliant	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V	20 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	25	25	25	25	25
JEDEC-95 code	MO-041BB	MO-041BB	MO-041BB	MO-041BB	MO-041BB
JESD-30 code	R-CDSO-N6	R-CDSO-N6	R-CDSO-N6	R-CDSO-N6	R-CDSO-N6
Number of components	2	2	2	2	2
Number of terminals	6	6	6	6	6
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	350 MHz	350 MHz	350 MHz	350 MHz	350 MHz

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