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BFX81DCSM-JQR-A

Description
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric Compare View All

BFX81DCSM-JQR-A Overview

Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6

BFX81DCSM-JQR-A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionSMALL OUTLINE, R-CDSO-N6
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage20 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)25
JEDEC-95 codeMO-041BB
JESD-30 codeR-CDSO-N6
Number of components2
Number of terminals6
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN AND PNP
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)350 MHz

BFX81DCSM-JQR-A Preview

BFX81DCSM
Dimensions in mm (inches).
2.29 ± 0.20
(0.09 ± 0.008)
1.65 ± 0.13
(0.065 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
0.64 ± 0.06
(0.025 ± 0.003)
Dual Bipolar N/P Devices in a
hermetically sealed
LCC2 Ceramic Surface Mount
Package for High Reliability
Applications
4.32 ± 0.13
(0.170 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
2
1
A
3
4
5
Dual Bipolar N/P Devices.
V
CEO
= 20V
I
C
= 0.2A
All Semelab hermetically sealed products can
be processed in accordance with the
requirements of BS, CECC and JAN, JANTX,
JANTXV and JANS specifications.
6
0.23 rad.
(0.009)
A = 1.27 ± 0.13
(0.05 ± 0.005)
6.22 ± 0.13
(0.245 ± 0.005)
LCC2 (MO-041BB)
Pinouts
Pin 1 – Collector 1
Pin 2 – Base 1
Pin 3 – Base 2
Pin 4 – Collector 2
Pin 5 – Emitter 2
Pin 6 – Emitter 1
Parameter
V
CEO
*
I
C(CONT)
h
FE
f
t
P
D
Test Conditions
Min.
Typ.
Max.
20
0.2
Units
V
A
-
@ 1/0.1 (V
CE
/ I
C
)
25
350M
0.5
Hz
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
2-Aug-02

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Description Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6 Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6 Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6 Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6 Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6
Is it Rohs certified? incompatible incompatible incompatible conform to conform to
Maker TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc
package instruction SMALL OUTLINE, R-CDSO-N6 SMALL OUTLINE, R-CDSO-N6 SMALL OUTLINE, R-CDSO-N6 SMALL OUTLINE, R-CDSO-N6 HERMETIC SEALED, CERAMIC, LCC2-6
Reach Compliance Code compliant compliant compliant compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 25 25 25 25 25
JEDEC-95 code MO-041BB MO-041BB MO-041BB MO-041BB MO-041BB
JESD-30 code R-CDSO-N6 R-CDSO-N6 R-CDSO-N6 R-CDSO-N6 R-CDSO-N6
Number of components 2 2 2 2 2
Number of terminals 6 6 6 6 6
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 350 MHz 350 MHz 350 MHz 350 MHz 350 MHz
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