DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D109
BCX54; BCX55; BCX56
NPN medium power transistors
Product specification
Supersedes data of 1999 Apr 19
2001 Oct 10
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
Driver stages of audio and video amplifiers.
DESCRIPTION
NPN medium power transistor in a SOT89 plastic
package. PNP complements: BCX51, BCX52 and BCX53.
MARKING
handbook, halfpage
BCX54; BCX55; BCX56
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
2
3
1
TYPE
NUMBER
BCX54
BCX54-10
BCX54-16
BCX55
BCX55-10
MARKING
CODE
BA
BC
BD
BE
BG
TYPE
NUMBER
BCX55-16
BCX56
BCX56-10
BCX56-16
MARKING
CODE
BM
BH
BK
BL
1
Bottom view
2
3
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
2001 Oct 10
2
Philips Semiconductors
Product specification
NPN medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BCX54
BCX55
BCX56
V
CEO
collector-emitter voltage
BCX54
BCX55
BCX56
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BCX54; BCX55; BCX56
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
45
60
100
45
60
80
5
1
1.5
0.2
1.3
+150
150
+150
V
V
V
V
V
V
V
A
A
A
W
UNIT
°C
°C
°C
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
94
14
UNIT
K/W
K/W
2001 Oct 10
3
Philips Semiconductors
Product specification
NPN medium power transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 125
°C
I
C
= 0; V
EB
= 5 V
V
CE
= 2 V; (see Fig.2)
I
C
= 5 mA
I
C
= 150 mA
I
C
= 500 mA
DC current gain
BCX54-10; 55-10; 56-10
BCX54-16; 55-16; 56-16
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation
voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
= 500 mA; I
B
= 50 mA
I
C
= 500 mA; V
CE
= 2 V
I
C
= 150 mA;
V
CE
= 2 V
BCX54; BCX55; BCX56
MIN.
−
−
−
63
63
40
63
100
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
130
1.3
MAX.
100
10
100
−
250
−
160
250
0.5
1
−
1.6
UNIT
nA
µA
nA
I
C
= 150 mA; V
CE
= 2 V; (see Fig.2)
V
V
MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
−
handbook, full pagewidth
160
MBH729
hFE
120
VCE = 2 V
80
40
0
10
−1
1
10
10
2
IC (mA)
10
3
Fig.2 DC current gain; typical values.
2001 Oct 10
4
Philips Semiconductors
Product specification
NPN medium power transistors
PACKAGE OUTLINE
BCX54; BCX55; BCX56
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
D
B
A
b3
E
HE
L
1
2
b2
3
c
w
M
b1
e
1
e
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
b1
0.48
0.35
b2
0.53
0.40
b3
1.8
1.4
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
L
min.
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
TO-243
EIAJ
SC-62
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2001 Oct 10
5
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