ID101
LOW LEAKAGE
PICO-AMP DUAL DIODE
Linear Systems replaces discontinued Intersil ID101
The ID101 is a low leakage Monolithic Dual Pico-Amp Diode
The ID101 low-leakage monolithic dual diode provides a
superior alternative to conventional diode technology
when reverse current (leakage) must be minimized. In
addition the monolithic dual construction allows
excellent capacitance matching per diode. The ID101
features a leakage current of 0.1 pA and is well suited
for use in applications such as input protection for
operational amplifiers.
FEATURES
DIRECT REPLACEMENT FOR INTERSIL ID101
REVERSE LEAKAGE CURRENT
REVERSE BREAKDOWN VOLTAGE
REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (Note 1)
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Forward Current
Reverse Current
Maximum Voltages
Reverse Voltage
Diode to Diode Voltage
I
R
= 0.1pA
BV
R
≥ 30V
C
rss
= 0.75pF
ID101 Benefits:
Negligible Circuit Leakage Contribution
Circuit “Transparent” Except to Shunt
High-Frequency Spikes
Simplicity of Operation
‐65°C to +200°C
‐55°C to +150°C
300mW
20mA
100µA
30V
±50V
ID101 Applications:
Op Amp Input Protection
Multiplexer Overvoltage Protection
ID101 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP.
BV
R
Reverse Breakdown Voltage
30
‐‐
V
F
Forward Voltage
0.8
‐‐
I
R
Reverse Leakage Current
‐‐
0.1
‐‐
2.0
|I
R1
‐I
R2
|
Differential Leakage Current
‐‐
‐‐
C
rSS
Total Reverse Capacitance(Note 2)
‐‐
0.75
Note 1 - Absolute maximum ratings are limiting values above which ID101 serviceability may be impaired.
Note 2 - Design reference only, not 100% tested
Click To Buy
pF
LSID101
TO-71 (Bottom View)
Available Packages:
MAX.
‐‐
1.1
‐‐
10
3
1
UNITS
V
V
pA
CONDITIONS
I
R
= 1µA
I
F
= 10mA
V
R
= 1V
V
R
= 10V
V
R
= 10V, f = 1MHz
FIGURE 1 – Operational Amplifier Protection
Input Differential Voltage limited to 0.8V (typ) by Diodes ID101
D
1
and D
2
. Common Mode Input voltage limited by Diodes ID101
D
3
and D
4
to ±15V.
FIGURE 2 – Sample & Hold Circuit
Typical Sample and Hold circuit with clipping. ID101 diodes
reduce offset voltages fed capacitively from the ID101 switch
gate.
LSID101
Micross Components Europe
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
ID101 in TO-71
ID101 available as bare die
Please contact Micross for
full package and die dimensions
Note pins 3 & 5 must not be connected, in
any fashion or manner, to any circuit or node
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
baredie@micross.com
Web:
www.micross.com/distribution.aspx
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