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LS846_TO-78

Description
N-CHANNEL JFET
File Size275KB,2 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Compare View All

LS846_TO-78 Overview

N-CHANNEL JFET

LS846
N-CHANNEL JFET
Linear Systems Low Leakage Low Noise JFET
The LS846 is a high-performance JFET featuring
extremely low noise and low leakage and is targeted for
use in a wide range of precision instrumentation
applications.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military and harsh environment
applications.
(See Packaging Information).
FEATURES 
LOW LEAKAGE 
I
G
 = 15pA TYP. 
LOW NOISE 
e
= 3nV/√Hz TYP. 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
‐65°C to +150°C 
Operating Junction Temperature 
+135°C 
Maximum Voltage and Current– Note 1 
‐V
GSS
 
Gate Voltage to Drain or Source 
60V 
‐V
GDS
 
Gate Voltage to Drain or Source 
60V 
‐V
DSO
 
Drain to Source Voltage 
60V 
‐I
G(f)
 
Gate Forward Current 
50mA 
Maximum Power Dissipation 
Device Dissipation @ Free Air – Total                 350mW @ +125°C 
 
 
 
 
 
 
 
MAX. 
‐‐ 
 
‐‐ 
‐‐ 
 
15 
 
3.5 
3.5 
 
50 
50 
30 
100 
 
20 
 
0.5 
 
UNITS 
 
µmho 
µmho 
 
mA 
 
 
pA 
nA 
pA 
pA 
 
µmho 
µmho 
 
dB 
nV/√Hz 
 
 
pF 
 
CONDITIONS 
V
DS 
= 0                  I
D
=1nA 
 
V
DG
= 15V         V
GS
= 0V      f = 1kHz 
     V
DG
= 15V         I
D
= 500µA     
 
V
DG
= 15V              V
GS
= 0V 
 
V
DS
= 15V               I
D
= 1nA 
              V
DS
=15V                 I
D
=500µA 
 
V
DG
= 15V I
D
= 500µA 
T
A
= +125°C
 
V
DG 
= 3V I
D
= 500µA 
V
DG
= 15V , V
DS
=0 
 
V
DG
= 15V              V
GS
= 0V 
V
DG
=  15V            I
D
= 500µA 
V
DS
= 15V      V
GS
= 0V       R
G
= 10MΩ 
f= 100Hz           NBW= 6Hz 
V
DS
=15V   I
D
=500µA  f=1KHz NBW=1Hz 
 
V
DS
= 15V,   I
D
=500µA   
 
V
DG
= 15V,   I
D
=500µA   
LS846 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated Single-
Ended Input Amps
High-Speed Comparators
Impedance Converters and vibrations
detectors.
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
BV
GSS
 
Breakdown Voltage 
60 
‐‐ 
TRANSCONDUCTANCE 
 
 
 
Y
fSS
 
Full Conduction 
1500 
‐‐ 
Y
fS
 
Typical Operation 
1000 
1500 
 
DRAIN CURRENT 
 
 
I
DSS
 
Full Conduction 
1.5 
 
GATE VOLTAGE 
 
 
V
GS
(off) or V
p
 
Pinchoff voltage 
‐‐ 
V
GS
(on) 
Operating Range 
0.5 
‐‐ 
 
GATE CURRENT 
 
 
‐I
G
max. 
Operating 
‐‐ 
15 
‐I
G
max. 
High Temperature 
‐‐ 
‐‐ 
‐I
G
max. 
Reduced V
DG
 
‐‐ 
‐I
GSS
max. 
At Full Conduction 
‐‐ 
‐‐ 
OUTPUT CONDUCTANCE 
 
 
 
Y
OSS
 
Full Conduction 
‐‐ 
‐‐ 
Y
OS
 
Operating 
‐‐ 
0.2 
 
NOISE 
 
 
NF 
Figure 
‐‐ 
‐‐ 
e
n
 
Noise Voltage 
‐‐ 
 
CAPACITANCE 
 
 
C
ISS
 
Input 
‐‐ 
‐‐ 
C
RSS
 
Reverse Transfer 
‐‐ 
‐‐ 
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
Click To Buy
TO-71 & TO-78 (Top View)
Available Packages:
LS846 / LS846 in TO-71 & TO-78
LS846 / LS846 available as bare die
Please contact
Micross
for full package and die dimensions
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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