FZ400R65KF2 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> FZ400R65KF2

FZ400R65KF2: DescriptionIGBT-modules; CategoryDiscrete semiconductor The transistor; File Size234KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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FZ400R65KF2 Overview

IGBT-modules

FZ400R65KF2 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	400 A
Collector-emitter maximum voltage	6300 V
Configuration	PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X7
Number of components	2
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	7350 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal off time (toff)	5900 ns
Nominal on time (ton)	1120 ns
VCEsat-Max	4.9 V
Base Number Matches	1

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Technische Information / technical information

IGBT-Module

IGBT-modules

FZ400R65KF2

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