BCX70 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (NPN)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.031 (0.8)
1
2
max. .004 (0.1)
0.035 (0.9)
0.079 (2.0)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking
BCX70G = AG
Code:
BCX70H = AH
BCX70J = AJ
BCX70K = AK
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Features
• NPN Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
• Suited for low level, low noise, low frequency
applications in hybrid circuits.
• Low current, low voltage.
• As complementary types, BCX71 Series PNP
transistors are recommended.
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Base Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Note:
(1) Mounted on FR-4 printed-circuit board.
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
R
ΘJA
T
j
T
S
Value
45
45
5.0
200
50
250
500
(1)
150
–65 to +150
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
Document Number 88176
09-May-02
www.vishay.com
1
BCX70 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
J
= 25°C unless otherwise noted)
Symbol
Test Condition
V
CE =
5 V, I
C
= 10
µA
V
CE =
5 V, I
C
= 10
µA
V
CE =
5 V, I
C
= 10
µA
V
CE =
5 V, I
C
= 10
µA
V
CE =
5 V, I
C
= 2 mA
V
CE =
5 V, I
C
= 2 mA
V
CE =
5 V, I
C
= 2 mA
V
CE =
5 V, I
C
= 2 mA
V
CE =
1 V, I
C
= 50 mA
V
CE =
1 V, I
C
= 50 mA
V
CE =
1 V, I
C
= 50 mA
V
CE =
1 V, I
C
= 50 mA
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10
µA
V
CE
= 1 V, I
C
= 50 mA
V
CB
= 45 V, V
BE
= 0 V
V
CB
= 45 V, V
BE
= 0 V
T
A
= 150°C
V
EB
= 4 V, I
C
= 0
V
CE
= 5 V, I
C
= 10 mA
f = 100 MHz
V
CB
= 10 V, f = 1 MHz, I
E
= 0
V
EB
= 0.5 V, f = 1 MHz, I
C
= 0
V
CE
= 5 V, I
C
= 200
µA,
R
S
= 2 kΩ, f = 1 kHz,
B = 200 Hz
V
CE
= 5 V, I
C
= 2 mA,
f = 1.0 kHZ
V
CC
= 10 V, I
C
= 10 mA,
I
B(on) =
-I
B(off)
= 1 mA
V
CC
= 10 V, I
C
= 10 mA,
I
B(on) =
-I
B(off)
= 1 mA
Min
—
30
40
100
120
180
250
380
50
70
90
100
50
100
600
700
550
—
—
—
—
—
100
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
650
520
780
—
—
—
250
2.5
8
2
200
260
330
520
85
480
Max
—
—
—
—
220
310
460
630
—
—
—
—
350
550
850
1050
750
—
—
20
20
20
—
—
—
6
Unit
DC Current Gain
h
FE
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CEsat
V
BEsat
mV
mV
Base-Emitter Voltage
V
BE
mV
nA
µA
nA
MHz
pF
pF
dB
Collector Cut-off Current
Emitter Cut-off Current
Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
BCX70G
BCX70H
BCX70J
BCX70K
I
CBO
I
EBO
f
T
C
CBO
C
EBO
F
Small Signal Current Gain
h
fe
Turn-on Time at R
L
= 990Ω (see fig. 1)
Turn-off Time at R
L
= 990Ω (see fig. 1)
t
on
t
off
150
800
ns
ns
www.vishay.com
2
Document Number 88176
09-May-02
BCX70 Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves
Fig. 1 Switching Waveforms
INPUT
10%
90%
t
on
t
off
10%
90%
OUTPUT
10%
t
d
t
r
t
s
t
f
90%
Document Number 88176
09-May-02
www.vishay.com
3
Power technology
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