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SEMIX302KH16S

Description
Rectifier Thyr./Diode Module
CategoryAnalog mixed-signal IC    Trigger device   
File Size210KB,5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric View All

SEMIX302KH16S Overview

Rectifier Thyr./Diode Module

SEMIX302KH16S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionFLANGE MOUNT, X-XUFM-X6
Contacts6
Reach Compliance Codecompli
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Quick connection descriptionG-GR
Description of screw terminalsA-K-2AK
Maximum holding current500 mA
JESD-30 codeX-XUFM-X6
Maximum leakage current75 mA
On-state non-repetitive peak current9300 A
Number of components1
Number of terminals6
Maximum on-state current300000 A
Maximum operating temperature130 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current471 A
Off-state repetitive peak voltage1600 V
Repeated peak reverse voltage1600 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
SEMiX302KH16s
Absolute Maximum Ratings
Symbol
Chip
I
T(AV)
I
TSM
i
2
t
sinus 180°
10 ms
10 ms
T
c
= 85 °C
T
c
= 100 °C
T
j
= 25 °C
T
j
= 130 °C
T
j
= 25 °C
T
j
= 130 °C
300
230
9300
8000
432000
320000
1700
1600
1600
T
j
= 130 °C
T
j
= 130 °C
130
1000
-40 ... 130
-40 ... 125
AC sinus 50Hz
1 min
1s
4000
4800
A
A
A
A
A
2
s
A
2
s
V
V
V
A/µs
V/µs
°C
°C
V
V
Conditions
Values
Unit
SEMiX
®
2s
V
RSM
V
RRM
V
DRM
(di/dt)
cr
Rectifier Thyr./Diode Module
SEMiX302KH16s
(dv/dt)
cr
T
j
Module
T
stg
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
V
isol
Characteristics
Symbol
Chip
V
T
V
T(TO)
r
T
I
DD
;I
RD
t
gd
t
gr
t
q
I
H
I
L
V
GT
I
GT
V
GD
I
GD
R
th(j-c)
R
th(j-c)
R
th(j-c)
Module
R
th(c-s)
M
s
M
t
a
w
250
per chip
per module
to heat sink (M5)
to terminals (M6)
3
2.5
0.045
5
5
5 * 9,81
K/W
K/W
Nm
Nm
m/s
2
g
T
j
= 25 °C, I
T
= 900 A
T
j
= 130 °C
T
j
= 130 °C
T
j
= 130 °C, V
DD
= V
DRM
; V
RD
= V
RRM
T
j
= 25 °C, I
G
= 1 A, di
G
/dt = 1 A/µs
V
D
= 0.67 * V
DRM
T
j
= 130 °C
T
j
= 25 °C
T
j
= 25 °C, R
G
= 33
T
j
= 25 °C, d.c.
T
j
= 25 °C, d.c.
T
j
= 130 °C, d.c.
T
j
= 130 °C, d.c.
per thyristor
per module
sin. 180°
per thyristor
per module
per thyristor
per module
0.091
0.091
3
200
0.25
10
1
2
150
150
300
500
1000
1.7
0.85
1.1
75
V
V
mΩ
mA
µs
µs
µs
mA
mA
V
mA
V
mA
K/W
K/W
K/W
K/W
K/W
K/W
Typical Applications*
• Input Bridge Rectifier for AC/DC motor
control
• Power supply
Conditions
min.
typ.
max.
Unit
KH
© by SEMIKRON
Rev. 34 – 25.03.2010
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