SEMIX302KT16S datasheet, PDF - EEWORLD Datasheet

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SEMIX302KT16S: DescriptionRectifier Thyristor Module; CategoryAnalog mixed-signal IC Trigger device; File Size214KB，5 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com; Environmental Compliance

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SEMIX302KT16S Overview

Rectifier Thyristor Module

SEMIX302KT16S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SEMIKRON
package instruction	FLANGE MOUNT, X-XUFM-X9
Contacts	9
Reach Compliance Code	compli
Shell connection	ISOLATED
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Quick connection description	0
Description of screw terminals	A-K-2AK
Maximum holding current	500 mA
JESD-30 code	X-XUFM-X9
Maximum leakage current	75 mA
On-state non-repetitive peak current	9300 A
Number of components	2
Number of terminals	9
Maximum on-state current	300000 A
Maximum operating temperature	130 °C
Minimum operating temperature	-40 °C
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	471 A
Off-state repetitive peak voltage	1600 V
Repeated peak reverse voltage	1600 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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SEMiX302KT16s

Absolute Maximum Ratings

Symbol

Chip

T(AV)

TSM

sinus 180°

10 ms

= 85 °C

= 100 °C

= 25 °C

= 130 °C

= 25 °C

= 130 °C

300

230

9300

8000

432000

320000

1700

1600

= 130 °C

130

1000

-40 ... 130

-40 ... 125

AC sinus 50Hz

1 min

4000

4800

A/µs

V/µs

°C

Conditions

Values

Unit

SEMiX

RSM

RRM

DRM

(di/dt)

Rectifier Thyristor Module

SEMiX302KT16s

(dv/dt)

Module

stg

Features

• Terminal height 17 mm

• Chips soldered directly to isolated

substrate

isol

Characteristics

Symbol

Chip

T(TO)

th(j-c)

Module

th(c-s)

250

per chip

per module

to heat sink (M5)

to terminals (M6)

2.5

0.045

5 * 9,81

K/W

m/s

= 25 °C, I

= 900 A

= 130 °C

= 130 °C, V

= V

DRM

; V

= V

RRM

= 25 °C, I

= 1 A, di

/dt = 1 A/µs

= 0.67 * V

DRM

= 130 °C

= 25 °C

= 25 °C, R

= 33

Ω

= 25 °C, d.c.

= 130 °C, d.c.

per thyristor

per module

sin. 180°

per thyristor

per module

per thyristor

per module

0.091

200

0.25

150

300

500

1000

1.7

0.85

1.7

mΩ

µs

K/W

Typical Applications*

• Input Bridge Rectifier for AC/DC motor

control

• Power supply

Conditions

min.

typ.

max.

Unit

Rev. 41 – 25.03.2010

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