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SEMIX303GD12E4C

Description
Trench IGBT Modules
File Size151KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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SEMIX303GD12E4C Overview

Trench IGBT Modules

SEMiX303GD12E4c
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
20 V
V
CES
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 150 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
466
359
300
900
-20 ... 20
10
-40 ... 175
338
252
300
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
900
1485
-40 ... 175
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 33c
Trench IGBT Modules
SEMiX303GD12E4c
®
T
j
= 175 °C
I
Fnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
18.5
1.22
1.03
1695
2.50
T
j
= 150 °C
T
j
= 150 °C
213
60
29.4
535
113
41.8
0.095
1.8
2.2
0.8
0.7
3.3
5.0
5.8
0.1
2.05
2.4
0.9
0.8
3.8
5.3
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
Conditions
min.
typ.
max.
Unit
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
V
GE
=V
CE
, I
C
= 11.4 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 300 A
T
j
= 150 °C
R
G on
= 1.8
T
j
= 150 °C
R
G off
= 1.8
di/dt
on
= 4840 A/µs T
j
= 150 °C
di/dt
off
= 2980 A/µs
T
j
= 150 °C
per IGBT
GD
© by SEMIKRON
Rev. 0 – 05.05.2010
1

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