Freescale Semiconductor
Technical Data
Document Number: MRF6V13250H
Rev. 0, 6/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at 1300 MHz.
These devices are suitable for use in pulsed and CW applications.
•
Typical Performance: V
DD
= 50 Volts, I
DQ
= 100 mA
Signal Type
Pulsed (200
μsec,
10% Duty Cycle)
P
out
(W)
250 Peak
f
(MHz)
1300
G
ps
(dB)
22.7
η
D
(%)
57.0
IRL
(dB)
--18
MRF6V13250HR3
MRF6V13250HSR3
1300 MHz, 250 W, 50 V
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Typical Performance: V
DD
= 50 Volts, I
DQ
= 10 mA, T
C
= 25
°C
Signal Type
CW
P
out
(W)
230 CW
f
(MHz)
1300
G
ps
(dB)
21.0
η
D
(%)
55.0
IRL
(dB)
--17
•
Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz
at all Phase Angles
•
250 Watts Pulsed Peak Power, 10% Duty Cycle, 200
μsec
•
CW Capable
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 50 V
DD
Operation
•
Characterized from 20 V to 50 V for Extended Power Range
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
CASE 465-
-06, STYLE 1
NI-
-780
MRF6V13250HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF6V13250HSR3
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
D
Value
--0.5, +120
--6.0, +10
-- 65 to +150
150
225
476
2.38
Unit
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Pulsed: Case Temperature 65°C, 250 W Pulsed, 200
μsec
Pulse Width, 10% Duty
Cycle, 50 Vdc, I
DQ
= 100 mA, 1300 MHz
CW: Case Temperature 77°C, 235 W CW, 50 Vdc, I
DQ
= 10 mA, 1300 MHz
Symbol
Value
(2,3)
Unit
°C/W
Z
θJC
R
θJC
0.07
0.42
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF6V13250HR3 MRF6V13250HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 50 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 90 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 640
μAdc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.58 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.2
58
340
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.0
2.0
0.1
1.8
2.4
0.25
2.7
3.0
0.3
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
120
—
—
—
—
—
—
1
—
10
20
μAdc
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 100 mA, P
out
= 250 W Peak (25 W Avg.), f = 1300 MHz
Pulsed, 200
μsec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
G
ps
η
D
IRL
21.5
53.5
—
—
—
—
22.7
57.0
--18
21.0
55.0
--17
24.0
—
--9
—
—
—
dB
%
dB
dB
%
dB
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 10 mA, P
out
= 230 W CW, f = 1300 MHz, T
C
= 25°C
Load Mismatch
(In Freescale Application Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 100 mA, P
out
= 250 W Peak (25 W Avg.),
f = 1300 MHz, Pulsed, 200
μsec
Pulse Width, 10% Duty Cycle
VSWR 10:1 at all Phase Angles
1. Part internally input matched.
Ψ
No Degradation in Output Power
MRF6V13250HR3 MRF6V13250HSR3
2
RF Device Data
Freescale Semiconductor
V
BIAS
R1
+
C1
+
C2
C3
Z10
Z19
+
C4
Z9
Z18
C7
C8
C9
C10
C11
C12
V
SUPPLY
RF
INPUT
Z11
Z1
C5
Z2
Z3
Z4
Z5
Z6
Z7
Z8
DUT
Z12
Z13
Z14
Z15
Z16
C6
Z17
RF
OUTPUT
Z20
Z21
+
C18
C17
C16
C15
C14
C13
V
SUPPLY
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9*
Z10
0.447″ x 0.063″ Microstrip
0.030″ x 0.084″ Microstrip
0.120″ x 0.063″ Microstrip
0.855″ x 0.293″ Microstrip
0.369″ x 0.825″ Microstrip
0.203″ x 0.516″ Microstrip
0.105″ x 0.530″ Microstrip
0.105″ x 0.530″ Microstrip
0.116″ x 0.050″ Microstrip
0.122″ x 0.050″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18, Z20
Z19*, Z21*
0.162″ x 1.160″ Microstrip
0.419″ x 1.160″ Microstrip
0.468″ x 0.994″ Microstrip
0.131″ x 0.472″ Microstrip
0.264″ x 0.222″ Microstrip
0.500″ x 0.111″ Microstrip
0.291″ x 0.063″ Microstrip
0.105″ x 0.388″ Microstrip
0.854″ x 0.052″ Microstrip
*Line length includes microstrip bends.
Figure 1. MRF6V13250HR3(HSR3) Test Circuit Schematic — 1300 MHz
Table 5. MRF6V13250HR3(HSR3) Test Circuit Component Designations and Values — 1300 MHz
Part
C1, C2
C3, C11, C14
C4, C6, C7, C18
C5
C8, C17
C9, C16
C10, C15
C12, C13
R1
PCB
Description
22
μF,
35 V Tantalum Capacitors
0.1
μF,
50 V Chip Capacitors
100 pF Chip Capacitors
4.7 pF Chip Capacitor
1000 pF Chip Capacitors
1000 pF Chip Capacitors
10K pF Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
15
Ω,
1/4 W Chip Resistor
0.030″,
ε
r
= 3.50
Part Number
T491X226K035AT
CDR33BX104AKWS
ATC800B101JT500XT
ATC100B4R7CT500XT
ATC100B102JT50XT
ATC700B102FT50XT
ATC200B103KT50XT
MCGPR63V477M13X26--RH
CRCW120615R0FKEA
RO4350B
Manufacturer
Kemet
AVX
ATC
ATC
ATC
ATC
ATC
Multicomp
Vishay
Rogers
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
3
C3
C1 C2
C4
R1
C7
C9
C11
C8
C10
C12
CUT OUT AREA
C5
C6
C18 C17
MRF6V13250H/HS
Rev 3
C15
C13
C16 C14
Figure 2. MRF6V13250HR3(HSR3) Test Circuit Component Layout — 1300 MHz
MRF6V13250HR3 MRF6V13250HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — PULSED
1000
P
out
, OUTPUT POWER (dBm) PULSED
60
59
58
57
56
55
54
53
0
10
20
30
40
50
30
31
32
33
34
35
36
37
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
P
in
, INPUT POWER (dBm) PULSED
V
DD
= 50 Vdc, I
DQ
= 100 mA, f = 1300 MHz
Pulse Width = 200
μsec,
Duty Cycle = 10%
P3dB = 55.4 dBm
(345 W)
P2dB = 55.1 dBm
(326 W)
P1dB = 54.7 dBm
(293 W)
Actual
Ideal
C
iss
C, CAPACITANCE (pF)
100
C
oss
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
C
rss
1
10
Figure 3. Capacitance versus Drain-
-Source Voltage
Figure 4. Pulsed Output Power versus
Input Power
25
23
η
D,
DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
21
19
17
35 V
15
13
11
20 V
0
50
100
150
200
25 V
30 V
I
DQ
= 100 mA, f = 1300 MHz
Pulse Width = 200
μsec
Duty Cycle = 10%
250
300
350
400
40 V
45 V
V
DD
= 50 V
24
V
DD
= 50 Vdc, I
DQ
= 100 mA, f = 1300 MHz
23 Pulse Width = 200
μsec
Duty Cycle = 10%
70
60
50
40
G
ps
, POWER GAIN (dB)
22
21
20
19
η
D
18
17
1
10
100
P
out
, OUTPUT POWER (WATTS) PULSED
G
ps
30
20
10
0
500
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
70
60
η
D,
DRAIN EFFICIENCY (%)
50
20 V
40
30
20
10
I
DQ
= 100 mA, f = 1300 MHz
Pulse Width = 200
μsec
Duty Cycle = 10%
0
50
100
150
200
250
300
350
400
25 V
35 V
40 V
45 V
V
DD
= 50 V
G
ps
, POWER GAIN (dB)
24
23
22
21
20
19
18
17
3
T
C
= --30_C
25_C
Figure 6. Pulsed Power Gain versus
Output Power
70
60
50
85_C
40
30
η
D
25_C
20
10
85_C
10
100
P
out
, OUTPUT POWER (WATTS) PULSED
0
500
η
D,
DRAIN EFFICIENCY (%)
30 V
V
DD
= 50 Vdc
I
DQ
= 100 mA
f = 1300 MHz
Pulse Width = 200
μsec
Duty Cycle = 10%
--30_C
G
ps
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Efficiency versus
Output Power
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
5
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