FPN530 / FPN530A
FPN530
FPN530A
C
TO-226
B
E
NPN Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NC.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
30
60
5.0
3.0
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
FPN530 / FPN530A
1.0
50
125
Units
W
°C/W
°C/W
1999 Fairchild Semiconductor Corporation
FPN530 / FPN530A
NPN Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 100°C
V
EB
= 4.0 V, I
C
= 0
30
60
5.0
100
10
100
V
V
V
nA
µA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 100 mA, V
CE
= 2.0 V
I
C
= 1.0 A, V
CE
= 2.0 V
I
C
= 2.0 A, V
CE
= 2.0 V
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 2.0 A, I
B
= 200 mA
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 1.0 A, V
CE
= 2.0 V
530
530A
100
250
120
80
300
250
450
1.25
1.0
mV
mV
mV
V
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
530
530A
V
BE(
sat
)
V
BE(
on
)
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
C
obo
F
T
Output Capacitance
Transition Frequency
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
I
C
= 100 mA, V
CE
= 5.0 V,
f = 100 MHz
150
50
pF
MHz
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FPN530 / FPN530A
NPN Low Saturation Transistor
(continued)
Typical Characteristics
V
BESAT
-BASE-EMITTER SATURATION VOLTAGE(V)
1.6
1.4
1.2
1
0.8
0.6
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
Base-Emitter On Voltage vs
Collector Current
1.4
V
ce
= 2.0V
1.2
1
- 40 °C
- 40 °C
0.8
0.6
0.4
0.2
0.0001
25 °C
25 °C
125 °C
0.4
0.2
0.001
125 °C
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
Input/Output Capacitance vs
Reverse Bias Voltage
450
400
CAPACITANCE (pf)
350
300
250
200
150
100
50
C
obo
f = 1.0MHz
C
ibo
0.6
25°C
0.4
125°C
0.2
- 40°C
0
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0
0.1
0.5 1
10 20
V
CE
- COLLECTOR VOLTAGE (V)
50
100
Current Gain vs Collector Current
800
V
ce
= 2.0V
Power Dissipation vs
Ambient Temperature
P
D
- POWER DIS SIPATION (W)
1
700
H
FE
- CURRENT GAIN
125°C
TO-226
0.75
600
500
400
300
200
100
0
0.0001
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
25°C
0.5
- 40°C
0.25
0
0
25
50
75
100
TEMPERATURE (
°
C)
125
150
TO-226AE Tape and Reel Data
TO -226AE Packaging
Conf iguratio n:
Fi gur e 1.0
TAPE and REEL OPTION
FSCINT Label sampl e
FAIRCHIL D S EMICONDUCTOR CORPORATION
L OT:
S e Fig 2
e
.0 for va rious
HTB:B
10000
Reeli g Styles
n
CBVK741B019
QTY:
NSID:
PN2222N
SP EC:
FSCINT
SP EC RE V:
QA REV:
D/C1:
D9842
B2
Labe l
5 Reels per
Int er med iate B ox
(FSCINT)
F63TNR Label s ampl e
LOT: CBVK7 41B019
QTY: 2000
Cus tom ized
Labe l
F63TNR
Labe l
Cus tom ized
FSID: PN222N
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Labe l
375m m x 267m m x 375mm
Int er med iate B ox
AMMO PACK OPTION
S e Fig 3
e
.0 for 2 Ammo
Pack Option
s
TO-226AE TNR/AMMO PACKING INF R
O MATION
Packing
Reel
Style
A
E
Qua
ntity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
Am m o
M
P
FSCINT
Labe l
327m m x 158m m x 135mm
Im med iate B ox
5 A mm o box es per
Int er med iate B ox
Uni t wei gh t
Reel weig ht wi th c om po nents
Amm o weig ht wi th c omp on en ts
= 0.300g m
= 0.868 k g
= 0.880 k g
Cus tom ized
Labe l
Max q uanti ty p er i nte rm ed iate b ox = 10,000 un its
Cus tom ized
Labe l
F63TNR
Bar c ode Label
333m m x 231m m x 183mm
Int er med iate B ox
BULK OPTION
S e Bulk P
e
acking
Informat ion tabl
e
Anti -stati c
FSCINT Bar c ode Label
(TO-226AE ) BULK PACKING INFORMATION
LEADCLIP
DIMENSION
NO L EAD CLIP
NO L EAD CLIP
NO L EADCLIP
Bub ble Sheets
EOL CO
DE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
TO-18 OPTION STD
TO-5
OPTION STD
QUANTITY
1.0 K / BOX
1.0 K / BOX
1.5 K / BOX
1,500 un its per
EO70 box for
s td o pti on
114m m x 102m m x 51mm
EO70 Im mediate B ox
TO-226 STANDARD
STRAIGHT
5 EO70 boxes pe r
Int er med iate B ox
530m m x 130m m x 83mm
Inter med iate box
Cus tomized
Label
FSCINT Labe l
7,500 un its m axim um
per interm edi at e box
for st d opt ion
©2000 Fairchild Semiconductor International
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Reeling Style
Configuration:
Fi gure 2.0
Machine Option "A" (H)
Machine Option "E"(J)
Style "A" D26Z, D70Z (s/h)
Style "E" D 27Z, D71Z (s/h)
TO-226AE Radial Ammo Packaging
Configuration:
Fi gure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
FIRST WIRE OFF IS COL LECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COL LECTOR
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
October 1999, Rev. A1
京公网安备 11010802033920号
EEWORLD
