SKiM 270GD176D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SKiM
®
5
IGBT Modules
SKiM 270GD176D
Preliminary Data
Inverse diode
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Features
Typical Applications*
Inverse diode
Thermal characteristics
Temperature Sensor
Mechanical data
GD
1
24-11-2008 MAJ
© by SEMIKRON
SKiM 270GD176D
Fig. 1 Output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Turn-on /-off energy = f (I
C
)
Fig. 4 Turn-on /-off energy = f (R
G
)
Fig. 5 Transfer characteristic
Fig. 6 Gate charge characteristic
2
24-11-2008 MAJ
© by SEMIKRON
SKiM 270GD176D
Fig. 7 Switching times vs. I
C
Fig. 8 Switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT
Z
thp(j-s)
= f (t
p
); D = t
p
/t
c
= t
p
* f
Fig. 10 Transient thermal impedance of FWD
Z
thp(j-s)
= f (t
p
); D = t
p
/t
c
= t
p
* f
Fig. 11 CAL diode forward characteristic, incl. R
CC'+ EE'
3
24-11-2008 MAJ
© by SEMIKRON
SKiM 270GD176D
Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON
products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We
therefore strongly recommend prior consultation of our personal.
4
24-11-2008 MAJ
© by SEMIKRON
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