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NDB7052L/L99Z

Description
75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size59KB,2 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
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NDB7052L/L99Z Overview

75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

NDB7052L/L99Z Parametric

Parameter NameAttribute value
MakerTexas Instruments
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)550 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum pulsed drain current (IDM)225 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

NDB7052L/L99Z Related Products

NDB7052L/L99Z NDP7052L NDB7052L/S62Z NDP7052L/J69Z NDB7052L/L86Z
Description 75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN 75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN 75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 550 mJ 550 mJ 550 mJ 550 mJ 550 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V 50 V 50 V 50 V 50 V
Maximum drain current (ID) 75 A 75 A 75 A 75 A 75 A
Maximum drain-source on-resistance 0.01 Ω 0.01 Ω 0.01 Ω 0.01 Ω 0.01 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-220AB TO-263AB TO-220AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSSO-G2 R-PSFM-T3 R-PSSO-G2
Number of components 1 1 1 1 1
Number of terminals 2 3 2 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 150 W 150 W 150 W 150 W 150 W
Maximum pulsed drain current (IDM) 225 A 225 A 225 A 225 A 225 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO YES NO YES
Terminal form GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Maker Texas Instruments - Texas Instruments Texas Instruments Texas Instruments
Shell connection DRAIN - DRAIN - DRAIN

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