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NDP7052L/J69Z

Description
75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size59KB,2 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
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NDP7052L/J69Z Overview

75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

NDP7052L/J69Z Parametric

Parameter NameAttribute value
MakerTexas Instruments
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)550 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum pulsed drain current (IDM)225 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

NDP7052L/J69Z Related Products

NDP7052L/J69Z NDP7052L NDB7052L/S62Z NDB7052L/L99Z NDB7052L/L86Z
Description 75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN 75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN 75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 75A, 50V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 550 mJ 550 mJ 550 mJ 550 mJ 550 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V 50 V 50 V 50 V 50 V
Maximum drain current (ID) 75 A 75 A 75 A 75 A 75 A
Maximum drain-source on-resistance 0.01 Ω 0.01 Ω 0.01 Ω 0.01 Ω 0.01 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1 1
Number of terminals 3 3 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 150 W 150 W 150 W 150 W 150 W
Maximum pulsed drain current (IDM) 225 A 225 A 225 A 225 A 225 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO YES YES YES
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Maker Texas Instruments - Texas Instruments Texas Instruments Texas Instruments
Shell connection - - DRAIN DRAIN DRAIN

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