BAR1210D datasheet, PDF - EEWORLD Datasheet

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BAR1210D: DescriptionRectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DIE-1; CategoryDiscrete semiconductor diode; File Size132KB，1 Pages; ManufacturerDiotec Electronics Corp; Environmental Compliance

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BAR1210D Overview

Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DIE-1

BAR1210D Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diotec Electronics Corp
Parts packaging code	DIE
package instruction	O-XUUC-N1
Contacts	1
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
JESD-30 code	O-XUUC-N1
Maximum non-repetitive peak forward current	250 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	175 °C
Maximum output current	12 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	UNCASED CHIP
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER

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DIOTEC ELECTRONICS CORP.

18020 Hobart Blvd., Unit B

Gardena, CA 90248 U.S.A

Tel.: (310) 767-1052 Fax: (310) 767-7958

Data Sheet No. BUDI-1200D-1A

FEATURES

MECHANICAL SPECIFICATION

PROPRIETARY

SOFT GLASS

JUNCTION

PASSIVATION FOR SUPERIOR RELIABILITY AND

PERFORMANCE

VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM

MECHANICAL STRENGTH AND HEAT DISSIPATION

(Solder Voids: Typical < 2%, Max. < 10% of Die Area)

Die Size:

0.120"

Round

Soft Glass

Passivation

Silver Plated

Copper Slugs

Silicon Die

Large die for high power capability

Very low forward voltage drop

Built-in stress relief mechanism for die protection

MILLIMETERS

DIM

Protects expensive automotive electronics and mobile

equipment

MIN

3.86

1.98

3.07

MAX

4.06

2.18

3.28

INCHES

MIN

0.152

0.078

0.121

MAX

0.160

0.086

0.129

Silver plated substrates for easy soldering or installation

Soldering temperature: 250

C maximum

0.76 Typ

1.02 Typ

0.030 Typ

0.040 Typ

MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified.

PARAMETER (TEST CONDITIONS)

Series Number

Maximum Recurrent Peak Reverse Voltage

Working Peak Reverse Voltage

Maximum DC Blocking Voltage

Non-repetitive Peak Reverse Voltage

(Half wave, Single phase, 60Hz peak)

Average Rectified Forward Current (Single phase, Resistive load,

60Hz)

Non-repetitive Peak Forward Surge Current

(Half wave, Single phase, 60Hz sine applied to rated load)

Maximum Instantaneous Forward Voltage

Maximum DC Reverse Current

At Rated DC Blocking Voltage

Operating & Storage Temperature Range

@ I

= 3 Amps

@ I

= 12 Amps

@ Tc = 25

SYMBOL

RATINGS

BAR BAR BAR BAR BAR BAR BAR

1200D 1201D 1202D 1204D 1206D 1208D 1210D

UNITS

RRM

RWM

RSM

FSM

STG

0.90

1.05

0.5

-65 to +175

120

240

480

AMPS

250

0.95

1.10

VOLTS

µA

°C

BAR12d

100

200

400

600

800

1000

VOLTS

720

960

1200

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Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	DIE	DIE	DIE	DIE	DIE	DIE	DIE
package instruction	O-XUUC-N1	O-XUUC-N1	O-XUUC-N1	O-XUUC-N1	O-XUUC-N1	O-XUUC-N1	O-XUUC-N1
Contacts	1	1	1	1	1	1	1
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V	0.9 V	0.9 V	0.9 V	0.9 V	0.95 V	0.9 V
JESD-30 code	O-XUUC-N1	O-XUUC-N1	O-XUUC-N1	O-XUUC-N1	O-XUUC-N1	O-XUUC-N1	O-XUUC-N1
Maximum non-repetitive peak forward current	250 A	250 A	250 A	250 A	250 A	250 A	250 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	1	1	1	1	1	1	1
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	12 A	12 A	12 A	12 A	12 A	12 A	12 A
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1000 V	100 V	600 V	50 V	200 V	800 V	400 V
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Maker	Diotec Electronics Corp	Diotec Electronics Corp	-	-	Diotec Electronics Corp	Diotec Electronics Corp	Diotec Electronics Corp

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