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FDW9926A
July 2008
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 10V).
Features
•
4.5 A, 20 V.
R
DS(ON)
= 32 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 45 mΩ @ V
GS
= 2.5 V
•
Optimized for use in battery circuit applications
•
Extended V
GSS
range (±10V) for battery applications
•
High performance trench technology for extremely
low R
DS(ON)
•
Low profile TSSOP-8 package
Applications
•
Battery protection
•
Load switch
•
Power management
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
1
2
3
4
8
7
6
5
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Total Power Dissipation
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
±12
(Note 1a)
Units
V
V
A
W
°C
4.5
30
1.0
0.6
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
125
208
°C/W
Package Marking and Ordering Information
Device Marking
9926A
Device
FDW9926A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2008
Fairchild Semiconductor Corporation
FDW9926A Rev E1(W)
FDW9926A
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min
20
Typ
Max
Units
V
Off Characteristics
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 16 V,
V
GS
=
±12
V,
V
GS
= 0 V
V
DS
= 0 V
I
D
= 250
µA
12
1
±100
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
0.6
1.0
–3
24
34
33
1.5
V
mV/°C
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 4.5 V,
I
D
= 4.5 A
V
GS
= 2.5 V,
I
D
= 3.8 A
V
GS
= 4.5 V, I
D
= 4.5A, T
J
=125°C
V
GS
= 4.5 V,
V
DS
= 5 V,
V
DS
= 5 V
I
D
= 4.5 A
15
32
45
48
mΩ
I
D(on)
g
FS
A
19
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
630
150
85
1.4
pF
pF
pF
Ω
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
8
8
15
4
16
16
26
8
9
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 4.5 A,
6.1
1.1
1.8
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= 0.83 A
(Note 2)
0.83
0.69
14
4
1.2
A
V
nS
nC
I
F
= 4.5 A,
d
iF
/d
t
= 100 A/µs
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θJA
is 208
°C/W
(steady state) when mounted on a minimum copper pad on FR-4.
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW9926A Rev. E1(W)
FDW9926A
Typical Characteristics
30
V
GS
= 10.0V
25
I
D
, DRAIN CURRENT (A)
20
15
10
5
0
0
0.5
1
4.5V
2.4
3.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.0V
2.2
2
1.8
1.6
2.5V
3.5V
2.5V
2.0V
1.4
1.2
1
0.8
3.0V
3.5V
4.0V
4.5V
10.0V
1.5
2
2.5
3
0
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
10
15
20
I
D
, DRAIN CURRENT (A)
25
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate voltage.
0.09
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 4.5A
V
GS
= 10V
1.4
I
D
= 2.25A
R
DS(ON)
, ON-RESISTANCE (OHM)
0.07
1.2
0.05
1
T
A
= 125
o
C
0.03
0.8
T
A
= 25 C
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
0.01
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
o
Figure 3. On-Resistance Variation with
temperature.
30
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
DS
= 5V
25
I
D
, DRAIN CURRENT (A)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= -55 C
o
125 C
o
V
GS
= 0V
10
1
0.1
0.01
0.001
0.0001
T
A
= 125
o
C
25
o
C
o
20
25 C
15
o
10
-55 C
5
0
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3
3.5
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW9926A Rev. E1(W)
FDW9926A
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 4.5A
4
CAPACITANCE (pF)
900
V
DS
= 5V
15V
f = 1MHz
V
GS
= 0 V
600
C
iss
10V
3
2
300
C
oss
1
C
rss
0
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
6
7
8
0
0
4
8
12
16
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
50
Figure 8. Capacitance Characteristics.
R
DS(ON)
LIMIT
1ms
I
D
, DRAIN CURRENT (A)
10
10ms
100ms
1s
1
DC
V
GS
= 4.5V
SINGLE PULSE
R
θJA
= 208
o
C/W
T
A
= 25
o
C
10s
100us
40
SINGLE PULSE
R
θJA
= 208°C/W
T
A
= 25°C
30
20
0.1
10
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
R
θJA
(t) = r(t) * R
θJA
R
θJA
=208 °C/W
P(pk)
0.02
0.01
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW9926A Rev. E1(W)
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