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SEMIX604GAR12E4S_10

Description
Trench IGBT Modules
File Size534KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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SEMIX604GAR12E4S_10 Overview

Trench IGBT Modules

SEMiX604GAR12E4s
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
20 V
V
CES
1200 V
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
916
704
600
1800
-20 ... 20
T
j
= 150 °C
10
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
707
529
600
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1800
3240
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
707
529
600
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1800
3240
-40 ... 175
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 4s
Trench IGBT Modules
SEMiX604GAR12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
®
V
GES
t
psc
T
j
I
F
I
Fnom
I
FRM
I
FSM
T
j
Inverse diode
T
j
= 175 °C
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 175 °C
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 1,0
R
Goff,main
= 6,2
R
G,X
= 2,2
R
E,X
= 0,5
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
Conditions
I
C
= 600 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.8
2.2
0.8
0.7
1.7
2.5
max.
2.05
2.4
0.9
0.8
1.9
2.7
6.5
0.36
Unit
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
V
GE
=V
CE
, I
C
= 24 mA
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5
5.8
0.12
37.2
2.32
2.04
3400
1.25
GAR
© by SEMIKRON
Rev. 0 – 16.11.2010
1

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