SEMiX453GAR12E4s
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
≤
20 V
V
CES
≤
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 150 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
683
526
450
1350
-20 ... 20
10
-40 ... 175
544
407
450
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1350
2430
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
544
407
450
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1350
2430
-40 ... 175
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 3s
Trench IGBT Modules
SEMiX453GAR12E4s
®
T
j
= 175 °C
I
Fnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
I
FRM
I
FSM
T
j
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 175 °C
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 1,0
Ω
R
Goff,main
= 1,0
Ω
R
G,X
= 2,2
Ω
R
E,X
= 0,5
Ω
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
I
C
= 450 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
27.9
1.74
1.53
2550
1.67
1.8
2.2
0.8
0.7
2.2
3.3
5.8
0.1
2.05
2.4
0.9
0.8
2.6
3.6
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
Conditions
min.
typ.
max.
Unit
V
GE
=V
CE
, I
C
= 18 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
GAR
© by SEMIKRON
Rev. 0 – 05.05.2010
1
SEMiX453GAR12E4s
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
Conditions
V
CC
= 600 V
I
C
= 450 A
T
j
= 150 °C
T
j
= 150 °C
min.
typ.
336
80
45
615
130
66.5
max.
Unit
ns
ns
mJ
ns
ns
mJ
T
j
= 150 °C
R
G on
= 1.9
Ω
T
j
= 150 °C
R
G off
= 1.9
Ω
di/dt
on
= 4000 A/µs T
j
= 150 °C
di/dt
off
= 5000 A/µs
T
j
= 150 °C
per IGBT
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
I
F
= 450 A
T
j
= 150 °C
di/dt
off
= 5000 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
I
F
= 450 A
T
j
= 150 °C
di/dt
off
= 5000 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
1.1
0.7
1.4
2.2
1.1
0.7
1.4
2.2
SEMiX 3s
Trench IGBT Modules
SEMiX453GAR12E4s
®
R
th(j-c)
0.065
2.1
2.1
1.3
0.9
1.9
2.6
350
70
28
0.11
2.1
2.1
1.3
0.9
1.9
2.6
350
70
28
0.11
20
2.5
2.4
1.5
1.1
2.1
2.8
2.46
2.4
1.5
1.1
2.1
2.8
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
nH
mΩ
mΩ
K/W
Inverse diode
V
F
= V
EC
I
F
= 450 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Freewheeling diode
V
F
= V
EC
I
F
= 450 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
Temperatur Sensor
R
100
B
100/125
res., terminal-chip
per module
to heat sink (M5)
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 1,0
Ω
R
Goff,main
= 1,0
Ω
R
G,X
= 2,2
Ω
R
E,X
= 0,5
Ω
T
C
= 25 °C
T
C
= 125 °C
3
to terminals (M6)
2.5
0.7
1
0.04
5
5
300
Nm
Nm
Nm
g
Ω
K
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
493 ± 5%
3550
±2%
GAR
2
Rev. 0 – 05.05.2010
© by SEMIKRON
SEMiX453GAR12E4s
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 05.05.2010
3
SEMiX453GAR12E4s
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 05.05.2010
© by SEMIKRON
SEMiX453GAR12E4s
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 05.05.2010
5
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