FXT551 datasheet, PDF - EEWORLD Datasheet

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FXT551: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size26KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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FXT551 Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, 3 PIN

FXT551 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JESD-30 code	R-PSIP-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	2.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.35 V

FXT551 Preview

PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 1 SEPT 93

FEATURES

* 60 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

FXT551

B

C

E

REFER TO ZTX551 FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

E-Line

TO92 Compatible

VALUE

-80

-60

-5

-2

-1

1

-55 to +200

UNIT

V

A

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

MIN.

-80

-60

-5

-0.1

-0.35

-1.1

50

10

150

25

150

MHz

pF

TYP.

MAX.

UNIT

V

µ

A

µ

A

CONDITIONS.

I

C

=-100

µ

A, I

E

=0

I

C

=-10mA, I

B

=0*

I

E

=-100

µ

A, I

C

=0

V

CB

=-60V, I

E

=0

V

EB

=-4V, I

C

=0

I

C

=-150mA, I

B

=-15mA*

I

C

=-150mA, I

B

=-15mA*

I

C

=-150mA, V

CE

=-10V*

I

C

=-1A, V

CE

=-10V*

I

C

=-50mA, V

CE

=-10V

f=100MHz

V

CB

=-10V, f=1MHz

Emitter Cut-Off Current I

EBO

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

V

CE(sat)

V

BE(sat)

V

Static Forward Current h

FE

Transfer Ratio

Transition

Frequency

Output Capacitance

f

T

C

obo

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

3-38

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