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KSP2907D27Z

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size55KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSP2907D27Z Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

KSP2907D27Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)100 ns
Maximum opening time (tons)45 ns
KSP2907
GENERAL PURPOSE TRANSISTOR
Collector-Emitter Voltage: V
CEO
= 40V
Collector Dissipation: P
C
(max)=625mW
PNP EPITAXIAL SILICON TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Rating
-60
-40
-5
-600
625
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
*Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
Test Conditions
I
C
= -10µA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -50V, I
E
=0
I
C
= -0.1mA, V
CE
= -10V
I
C
= -1mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
*I
C
= -150mA, V
CE
= -10V
*I
C
= -500mA, V
CE
= -10V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
V
CB
= -10V, I
E
=0
f=1MHz
I
C
= -50mA, V
CE
= -20V
f=100MHz
V
CC
= -30V, I
C
= -150mA
I
B1
= -15mA
V
CC
= -6V, I
C
= -150mA
I
B1
=I
B2
=15mA
Min
-60
-40
-5
-20
35
50
75
100
30
Typ
Max
Unit
V
V
V
nA
300
-0.4
-1.6
-1.3
-2.6
8
V
V
V
V
pF
MHz
45
100
ns
ns
*Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Output Capacitance
*Current Gain Bandwidth Product
Turn On Time
Turn Off Time
V
CE
(sat)
V
CE
(sat)
C
OB
f
T
t
ON
t
OFF
250
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Rev. B
©
1999 Fairchild Semiconductor Corporation

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Description Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Maker Fairchild Fairchild Fairchild Fairchild Fairchild Fairchild
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A
Collector-emitter maximum voltage 40 V 40 V 40 V 40 V 40 V 40 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 75 75 75 75 75 75
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
Maximum off time (toff) 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns
Maximum opening time (tons) 45 ns 45 ns 45 ns 45 ns 45 ns 45 ns
JEDEC-95 code TO-92 TO-92 TO-92 - TO-92 -

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