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SEMIX653GD176HDC

Description
Trench IGBT Modules
CategoryDiscrete semiconductor    The transistor   
File Size160KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric Compare View All

SEMIX653GD176HDC Overview

Trench IGBT Modules

SEMIX653GD176HDC Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionFLANGE MOUNT, R-XUFM-X29
Contacts29
Manufacturer packaging codeCASE SEMIX 33C
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)650 A
Collector-emitter maximum voltage1700 V
Configuration3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X29
JESD-609 codee3/e4
Number of components6
Number of terminals29
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN/SILVER
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)1165 ns
Nominal on time (ton)380 ns
VCEsat-Max2.45 V
SEMiX653GD176HDc
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 1000 V
V
GE
20 V
V
CES
1700 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 125 °C
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1700
619
438
450
900
-20 ... 20
10
-55 ... 150
545
365
450
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
900
2900
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 33c
Trench IGBT Modules
SEMiX653GD176HDc
®
T
j
= 150 °C
I
Fnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
I
C
= 450 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 125 °C
5.2
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
39.6
1.65
1.31
4200
1.67
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
290
90
300
975
190
180
0.054
2
2.45
1
0.9
2.2
3.4
5.8
2.45
2.9
1.2
1.1
2.8
4.0
6.4
3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
Conditions
min.
typ.
max.
Unit
V
GE
=V
CE
, I
C
= 18 mA
V
GE
= 0 V
V
CE
= 1700 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 1200 V
I
C
= 450 A
R
G on
= 3.6
R
G off
= 3.6
GD
© by SEMIKRON
Rev. 1 – 24.06.2010
1

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