SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
FCX688B
C
*
*
*
*
2W POWER DISSIPATION
10A Peak Pulse Current
Excellent H
FE
Characteristics up to 10 Amps
Extremely Low Saturation Voltage
Complimentary Type -
Partmarking Detail -
FCX789A
688
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
12
12
5
10
3
1 †
2 ‡
-55 to +150
UNIT
V
V
V
A
A
W
W
°C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX688B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
Min
12
12
5
0.1
0.1
40
60
180
350
400
1.1
1.0
500
400
100
150
200
40
40
500
MHz
pF
pF
ns
ns
Typ
Max
UNIT
V
V
V
µA
µA
mV
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=100µA
I
C
=10mA*
I
E
=100µA
V
CB
=9V
V
EB
=4V
I
C
=0.1A, I
B
=1mA *
I
C
=0.1A, I
B
=0.5mA *
I
C
=1A, I
B
=10mA *
I
C
=3A, I
B
=10mA *
I
C
=4A, I
B
=50mA *
I
C
=3A, I
B
=20mA *
IC=3A, V
CE
=2V *
I
C
=100mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, I
B1
=I
B2
=50mA
V
CC
=10V
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer
Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
V
BE(sat)
V
BE(on)
h
FE
f
T
C
ibo
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
京公网安备 11010802033920号
EEWORLD
