FSPJ164R, FSPJ164F
Data Sheet
December 2001
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Fairchild Star*Power Rad Hard
MOSFETs have been specifically
TM
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
DS(ON)
and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300 krads
while maintaining the guaranteed performance for Single
Event Effects (SEE) which the Fairchild FS families have
always featured.
The Fairchild portfolio of Star*Power FETs includes a family
of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and
Star*Power Gold products. Star*Power FETs are optimized
for total dose and r
DS(ON)
performance while exhibiting SEE
capability at full rated voltage up to an LET of 37. Star*Power
Gold FETs have been optimized for SEE and Gate Charge
providing SEE performance to 80% of the rated voltage for
an LET of 82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45215W.
Features
• 68A, 150V, r
DS(ON)
= 0.022Ω
• UIS Rated
• Total Dose
- Meets Pre-Rad Specifications to 100 krad (Si)
- Rated to 300 krad (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 100% of Rated Breakdown and
V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 Rad (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
• Photo Current
- 14nA Per-Rad (Si)/s Typically
• Neutron
- Maintain Pre-Rad Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
D
G
S
Packaging
TO-254AA
G
S
D
Ordering Information
RAD LEVEL
10K
100K
100K
300K
300K
SCREENING LEVEL
PART NUMBER/BRAND
Engineering Samples FSPJ164D1
TXV
Space
TXV
Space
FSPJ164R3
FSPJ164R4
FSPJ164F3
FSPJ164F4
CAUTION: Beryllia Warning per MIL-PRF-19500
refer to package specifications.
©2001 Fairchild Semiconductor Corporation
FSPJ164R, FSPJ164F Rev. B
FSPJ164R, FSPJ164F
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSPJ164R, FSPJ164F
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH (See Test Figure) . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
192
77
1.54
130
68
200
-55 to 150
300
9.3 (Typical)
W
W
W/
o
C
A
A
A
o
C
o
C
UNITS
V
V
A
A
A
V
150
150
68
43
200
±30
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
150
-
2.0
1.0
-
-
-
-
-
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
-
-
V
GS
= 0V to 12V
V
DD
= 75V,
I
D
= 68A
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 68A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.018
-
-
-
-
-
115
35
35
195
12
7
6200
1160
45
-
MAX
-
5.5
4.5
-
25
250
100
200
1.632
0.022
0.040
35
160
65
15
140
45
45
-
-
-
-
-
-
0.65
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 120V,
V
GS
= 0V
V
GS
=
±30V
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 68A
I
D
= 43A,
V
GS
= 12V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DD
= 75V, I
D
= 68A,
R
L
= 1.12Ω, V
GS
= 12V,
R
GS
= 2.35Ω
©2001 Fairchild Semiconductor Corporation
FSPJ164R, FSPJ164F Rev. B
FSPJ164R, FSPJ164F
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
V
SD
t
rr
Q
RR
T
C
= 25
o
C, Unless Otherwise Specified
MIN
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
GS
= 0, V
DS
= 120V
V
GS
= 12V, I
D
= 68A
V
GS
= 12V, I
D
= 43A
15.0
2.0
-
-
-
-
MAX
-
4.5
100
25
1.632
0.022
MIN
-
1.5
MAX
UNITS
-
4.5
100
50
1.836
0.025
V
V
nA
µA
V
Ω
100 krad
300 krad
I
SD
= 68A
I
SD
= 68A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
3.2
MAX
1.2
370
-
UNITS
V
ns
µC
Electrical Specifications up to 300 krad
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT
(NOTE 5)
(NOTE 6)
TYPICAL LET
(MeV/mg/cm)
37
60
60
82
82
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
V
GS
BIAS
(V)
-10
-2
-8
0
-5
(NOTE 7)
MAXIMUM
V
DS
BIAS
(V)
150
150
120
120
90
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
TYPICAL RANGE (µ)
36
32
32
28
28
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm
2
, RANGE = 36µ
LET = 60MeV/mg/cm
2
, RANGE = 32µ
LET = 82MeV/mg/cm
2
, RANGE = 28µ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
150
200
LET = 37
160
V
DS
(V)
100
V
DS
(V)
120
80
50
40
LET = 82
LET = 60
TEMP = 25
o
C
0
0
-2
-4
-6
V
GS
(V)
-8
-10
-12
0
0
5
10
15
20
25
30
35
NEGATIVE V
GS
BIAS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
©2001 Fairchild Semiconductor Corporation
FSPJ164R, FSPJ164F Rev. B
FSPJ164R, FSPJ164F
Performance Curves
1E-3
LIMITING INDUCTANCE (HENRY)
Unless Otherwise Specified
(Continued)
80
70
1E-4
ILM = 10A
I
D
, DRAIN (A)
30A
1E-5
100A
300A
1E-6
60
50
40
30
20
10
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
0
-50
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
500
25
0
C
I
D
, DRAIN CURRENT (A)
100
12V
Q
G
100µs
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
100
500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
G
Q
GS
Q
GD
10ms
CHARGE
FIGURE 5. FORWARD BIAS SAFE OPERATING ARE A
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 43A
2.0
NORMALIZED r
DS(ON)
I
D
, DRAIN TO SOURCE CURRENT (A)
200
V
GS
= 14V
V
GS
= 12V
160
V
GS
= 10V
V
GS
= 8V
V
GS
= 6V
1.5
120
1.0
80
V
GS
= 6V
40
0.5
0.0
-80
0
-40
0
40
80
120
160
0
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
FSPJ164R, FSPJ164F Rev. B
FSPJ164R, FSPJ164F
Performance Curves
NORMALIZED THERMAL RESPONSE (Z
θJC
)
10
Unless Otherwise Specified
(Continued)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
P
DM
t
1
0.01
t
2
10
1
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
1000
I
AS
, AVALANCHE CURRENT (A)
100
STARTING T
J
= 150
o
C
10
STARTING T
J
= 25
o
C
1
0.01
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DS
L
+
CURRENT I
TRANSFORMER
AS
BV
DSS
t
P
I
AS
50Ω
+
V
DD
V
DS
V
DD
-
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
≤
20V
-
DUT
50V-150V
50Ω
t
AV
0V
t
P
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
©2001 Fairchild Semiconductor Corporation
FSPJ164R, FSPJ164F Rev. B
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