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FS5AS-3-T2

Description
Power Field-Effect Transistor, 5A I(D), 150V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP3, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size180KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

FS5AS-3-T2 Overview

Power Field-Effect Transistor, 5A I(D), 150V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP3, 4 PIN

FS5AS-3-T2 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.38 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

FS5AS-3-T2 Related Products

FS5AS-3-T2 FS5AS-3-T1
Description Power Field-Effect Transistor, 5A I(D), 150V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP3, 4 PIN Power Field-Effect Transistor, 5A I(D), 150V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP3, 4 PIN
Maker Mitsubishi Mitsubishi
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 150 V 150 V
Maximum drain current (ID) 5 A 5 A
Maximum drain-source on-resistance 0.38 Ω 0.38 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 20 A 20 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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