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2SA2043-TL

Description
Small Signal Bipolar Transistor, 10A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size49KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SA2043-TL Overview

Small Signal Bipolar Transistor, 10A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN

2SA2043-TL Parametric

Parameter NameAttribute value
Objectid1739063475
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)220 MHz
Ordering number : EN6914A
2SA2043
SANYO Semiconductors
DATA SHEET
2SA2043
Applications
PNP Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET and MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
--15
--15
--5
--10
--13
--1.2
1
15
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=-
-12V, IE=0A
VEB=-
-4V, IC=0A
VCE=-
-2V, IC=--500mA
VCE=-
-2V, IC=--500mA
VCB=-
-10V, f=1MHz
200
220
90
Ratings
min
typ
max
--0.1
--0.1
560
MHz
pF
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11707 TI IM TC-00000430 / O0406EA MS IM TC-00000206 No.6914-1/4

2SA2043-TL Related Products

2SA2043-TL
Description Small Signal Bipolar Transistor, 10A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN
Objectid 1739063475
package instruction SMALL OUTLINE, R-PSSO-G2
Contacts 3
Reach Compliance Code unknown
ECCN code EAR99
Shell connection COLLECTOR
Maximum collector current (IC) 10 A
Collector-emitter maximum voltage 15 V
Configuration SINGLE
Minimum DC current gain (hFE) 200
JESD-30 code R-PSSO-G2
Number of components 1
Number of terminals 2
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type PNP
Certification status Not Qualified
surface mount YES
Terminal form GULL WING
Terminal location SINGLE
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 220 MHz
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