Ordering number:ENN6324
PNP/NPN Epitaxial Planar Silicon Transistors
2SA608N/2SC536N
Low-Frequency
General-Purpose Amplifier Applications
Applications
· Capable of being used in the low frequency to high
frequency range.
Package Dimensions
unit:mm
2164
[2SA608N/2SC536N]
4.5
3.7
Features
· Large current capacity and wide ASO.
0.45
3.5
1.4max
0.6
1.27
4.0max
13.7
14.0
0.5
0.45
4.5
0.44
1
2.5
2
2.5
3
( ) : 2SA608N
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1 : Emitter
2 : Collector
3 : Base
SANYO : NPA-WA
Ratings
(–50)60
(–)50
(–)6
(–)150
(–)400
500
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=(–)40V, IE=0
VEB=(–)5V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)0.1mA
160*
70
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
560*
Unit
µA
µA
Continued on next page.
* The 2SA608N/2SC536N are classified by 1mA h
FE
as follow
Rank
hFE
F
160 to 320
G
280 to 560
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10700TS (KOTO) TA-2543 No.6324–1/4
2SA608N/2SC536N
Continued on preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCE=(–)6V, IC=(–)10mA
VCB=(–)6V, f=1MHz
IC=(–)100mA, IB=(–)10mA
(–)60
(–)50
(–)6
Ratings
min
typ
200
3.0
(4.5)
(–)0.3
(–)1.0
max
Unit
MHz
pF
pF
V
V
V
V
V
IC=(–)100mA, IB=(–)10mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
IE=(–)10µA, IC=0
--16
IC -- VCE
µ
A
--50
µ
A
--45
A
--40
µ
A
--35
µ
A
--30
µ
--25
µ
A
2SA608N
Collector Current, IC – mA
20
IC -- VCE
50
µ
A
45
µ
A
40
µ
A
2SC536N
Collector Current, IC – mA
16
--12
35
µ
A
12
30
µ
A
--8
--20
µ
A
--15
µ
A
25
µ
A
8
20
µA
15
µA
--4
--10µA
--5
µA
4
10
µA
5µA
IB=0
40
50
IT00497
0
0
--10
--20
--30
--40
IB=0
--50
IT00496
0
0
10
20
30
Collector-to-Emitter Voltage, VCE – V
--240
Collector-to-Emitter Voltage, VCE – V
240
IC -- VBE
2SA608N
VCE=--6V
Collector Current, IC – mA
IC -- VBE
2SC536N
VCE=6V
--200
200
Collector Current, IC – mA
--160
160
--120
120
Ta=7
5
°
C
25
°
C
--25
°
C
--80
80
--40
40
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT00498
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT00499
Base-to-Emitter Voltage, VBE – V
1000
7
5
Base-to-Emitter Voltage, VBE – V
1000
hFE -- IC
2SA608N
VCE=--6V
hFE -- IC
2SC536N
VCE=6V
7
5
DC Current Gain, hFE
DC Current Gain, hFE
3
2
Ta=75°C
3
2
Ta=75°C
--25°C
100
7
5
3
2
25°C
100
7
5
3
2
--25°C
10
--0.1 2 3
5 7--1.0 2 3
10
Collector Current, IC – mA
5 7 --10
2 3
5 7--100 2 3
5 7
--1000
IT00500
0.1
2 3
5 7 1.0
2 3
Collector Current, IC – mA
5 7 10
Ta=75
°
C
25
°
C
--25
°
C
25°C
2 3
5 7 100
2 3
5 7 1000
IT00501
No.6324–2/4
2SA608N/2SC536N
1000
f T -- IC
2SA608N
VCE=--6V
1000
f T -- IC
2SC536N
VCE=6V
Gain-Bandwidth Product, fT – MHz
5
3
2
Gain-Bandwidth Product, fT – MHz
7
7
5
3
2
100
7
5
3
2
100
7
5
3
2
10
--1.0
2
3
5 7 --10
2
3
Collector Current, IC – mA
5 7 --100
2
3
5 7--1000
IT00502
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC – mA
100
7
5
5 7 1000
IT00503
100
7
5
Cob -- VCB
2SA608N
f=1MHz
Cob -- VCB
2SC536N
f=1MHz
Output Capacitance, Cob – pF
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
IT00504
Output Capacitance, Cob – pF
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
IT00505
Collector-to-Base Voltage, VCB -- V
Collector-to-Base Voltage, VCB -- V
1.0
7
--1.0
7
VCE(sat) -- IC
2SA608N
IC / IB=--10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
VCE(sat) -- IC
2SC536N
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
5
3
2
5
3
2
--0.1
7
5
3
2
0.1
7
5
3
2
0.01
--0.01
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC – mA
1000
7
5
5 7--1000
IT00506
1.0
2
3
5 7 10
2
3
5 7 100
2
3
ASO
Collector Current, IC – mA
600
5 7 1000
IT00507
PC -- Ta
ICP
IC
2SA608N / 2SC536N
For PNP, the polarity is reversed.
10
10
2SA608N / 2SC536N
Collector Dissipation, P
C
– mW
500
Collector Current, IC – mA
3
2
100
7
5
3
2
10
7
5
3
2
5
7
1.0
2
3
5
7
10
ms
DC
0m
s
400
op
era
tio
n
300
200
100
0
2
3
5
Collector-to-Emitter Voltage, VCE – V
7 100
IT00511
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
IT00510
No.6324–3/4
2SA608N/2SC536N
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2000. Specifications and information herein are subject
to change without notice.
PS No.6324–4/4
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