Power Field-Effect Transistor, 0.2A I(D), 30V, 7.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (ID) | 0.2 A |
| Maximum drain-source on-resistance | 7.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
京公网安备 11010802033920号
EEWORLD
