Ordering number:341G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency
Power Amplifier Applications
Features
· High collector dissipation and wide ASO.
Package Dimensions
unit:mm
2009B
[2SB632, 632K/2SD612, 612K]
( ) : 2SB632, 632K
1 : Emitter
2 : Collector
3 : Base
JEDEC : TO-126
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
I CP
PC
Conditions
2SB632, D612
(–)25
(–)25
2SB632K, D612K
(–)35
(–)35
(–)5
(–)2
(–)3
1
Unit
V
V
V
A
A
W
W
Tc=25˚C
Tj
Tstg
10
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Brakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ICBO
IEBO
IE=(–)10µA, IC=0
VCB=(–)20V, IE=0
VEB=(–)4V, IC=0
Conditions
B632, D612
B632K, D612K
B632, D612
B632K, D612K
Ratings
min
(–)25
(–)35
(–)25
(–)35
(–)5
(–)1
(–)1
ty p
max
Unit
V
V
V
V
V
µA
µA
* : The 2SB632/2SD612 are classified by 500mA h
FE
as follows :
60
D
120
100
E
200
160
F
320
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/D174MW, TS/E108, 8-2176 No.341–1/9
2SB632, 632K/2SD612, 612K
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Turn-ON Time
Fall Time
Storage Time
Symbol
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
ton
tf
tstg
Conditions
VCE=(–)2V, IC=(–)500mA
VCE=(–)2V, IC=(–)1.5A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
IC=(–)1.5A, IB=(–)0.15A
IC=(–)1.5A, IB=(–)0.15A
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Ratings
min
60*
30
100
(45)30
(–0.4)
0.3
(–)1.1
(60)50
(80)
100
400
(–0.9)
0.8
(–)1.5
MHz
pF
V
V
V
ns
ns
ns
ns
ty p
max
320*
Unit
Switching Time Test Circuit
No.341–2/9
2SB632, 632K/2SD612, 612K
Sample Application Circuit 1 :
8W pure complementary amplifier using the 2SB632K/2SD612K
[Specifications] Power supply : 100V AC supply transformer with no signal=28.8V.
Maximum output=(THD=5%)=25V, f=1kHz, R
L
=8Ω, R
g
=600Ω.
Parameter
Quiescent Current
(Collector Current)
Symbol
ICCO
ID
IC
VG
VG
Output Power
Total Harmonic Distortion
Input Resistance
Output Resistance
PO
THD
ri
ro
Output stage
Drive stage
First stage
Without NFB
With NFB
THD=5%
PO=1W
PO=1W
PO=1W
Conditions
ty p
14.0
42.0
1.4
75
40
8.7
0.05
60
0.2
Unit
mA
mA
mA
dB
dB
W
%
kΩ
Ω
Voltage Gain
No.341–4/9
Microcontroller MCU
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