PTF081301F datasheet, PDF - EEWORLD Datasheet

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PTF081301F: DescriptionThermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz; File Size288KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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PTF081301F Overview

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

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PTF081301E

PTF081301F

Thermally-Enhanced High Power RF LDMOS FETs

130 W, 869 – 960 MHz

Description

The PTF081301E and PTF081301F are 130-watt, internally-matched

GOLDMOS

FETs intended for EDGE and CDMA applications in the 869

to 960 MHz bands. Thermally-enhanced packaging provides the coolest

operation available. Full gold metallization ensures excellent device

lifetime and reliability.

PTF081301E

Package 30248

PTF081301F

Package 31248

EDGE Modulation Spectrum Performance

= 28 V, I

= 950 mA, f = 959.8 MHz

-30

CASE

= 25°C

CASE

= 90°C

400 kHz

600 kHz

-90

Features

•

Drain Efficiency (%)

Thermally-enhanced packages

Broadband internal matching

Typical EDGE performance

- Average output power = 65 W

- Gain = 18 dB

- Efficiency = 40%

Typical CW performance

- Output power at P–1dB = 150 W

- Gain = 17 dB

- Efficiency = 55%

Integrated ESD protection: Human Body

Model, Class 1 (minimum)

Excellent thermal stability

Low HCI drift

Capable of handling 10:1 VSWR @ 28 V,

130 W (CW) output power

Modulation Spectrum (dB)

-40

-50

-60

-70

-80

Efficiency

•

Output Power (dBm)

RF Characteristics

EDGE Measurements

(not subject to production test—verified by design/characterization in Infineon test fixture)

= 28 V, I

= 950 mA, P

OUT

= 65 W, f = 959.8 MHz

Characteristic

Error Vector Magnitude

Modulation Spectrum @ 400 kHz

Modulation Spectrum @ 600 kHz

Gain

Drain Efficiency

Symbol

EVM (RMS)

ACPR

Min

—

Typ

2.5

–62

–74

Max

—

Unit

dBc

All published data at T

CASE

= 25°C unless otherwise indicated

ESD:

Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 11

Rev. 03, 2005-05-02

PTF081301F Related Products

	PTF081301F	PTF081301E
Description	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

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