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PTF081301E

Description
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz
File Size288KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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PTF081301E Overview

Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz

PTF081301E
PTF081301F
Thermally-Enhanced High Power RF LDMOS FETs
130 W, 869 – 960 MHz
Description
The PTF081301E and PTF081301F are 130-watt, internally-matched
GOLDMOS
FETs intended for EDGE and CDMA applications in the 869
to 960 MHz bands. Thermally-enhanced packaging provides the coolest
operation available. Full gold metallization ensures excellent device
lifetime and reliability.
PTF081301E
Package 30248
PTF081301F
Package 31248
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 950 mA, f = 959.8 MHz
-30
60
T
CASE
= 25°C
T
CASE
= 90°C
50
40
400 kHz
30
20
10
600 kHz
-90
36
38
40
42
44
46
48
50
0
Features
Drain Efficiency (%)
Thermally-enhanced packages
Broadband internal matching
Typical EDGE performance
- Average output power = 65 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 17 dB
- Efficiency = 55%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
Modulation Spectrum (dB)
-40
-50
-60
-70
-80
Efficiency
Output Power (dBm)
RF Characteristics
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 950 mA, P
OUT
= 65 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
Typ
2.5
–62
–74
18
40
Max
Unit
%
dBc
dBc
dB
%
η
D
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03, 2005-05-02

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PTF081301E PTF081301F
Description Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz
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