PTMA080152M datasheet, PDF - EEWORLD Datasheet

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PTMA080152M: DescriptionWideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz; CategoryWireless rf/communication Radio frequency and microwave; File Size285KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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PTMA080152M Overview

Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz

PTMA080152M Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
Reach Compliance Code	compli
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	29 dB
Maximum input power (CW)	42 dBm
JESD-609 code	e3
Maximum operating frequency	1000 MHz
Minimum operating frequency	700 MHz
RF/Microwave Device Types	WIDE BAND HIGH POWER
Terminal surface	Matte Tin (Sn)
Maximum voltage standing wave ratio	10

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PTMA080302M

Confidential, Limited Internal Distribution

Wideband RF LDMOS Integrated Power Amplifier

30 W, 700 – 1000 MHz

Description

The PTMA080302M is a wideband, matched, 30-watt, 2-stage

LDMOS integrated amplifier intended for use in all typical modulation

formats from 700 to 1000 MHz. This device is offered in a 20-lead,

thermally-enhanced, overmolded package for cool and reliable

operation.

PTMA080302M

Package PG-DSO-20-63

Features

Broadband Performance

= 28 V, I

DQ1

= 120 mA, I

DQ2

= 280 mA,

fixture tuned for 920 - 960 MHz

•

Designed for wide RF modulation bandwidths,

and low memory effects

On-chip matching, integrated input DC block,

50-ohm input and ~ 8-ohm output

Typical GSM/EDGE performance, 940 MHz, 28 V

- Output power = 15 W Avg.

- Linear gain = 31 dB

- Power added efficiency = 36%

- EVM at 15 W = 1.7 %

- ACPR at 400 kHz = –61 dBc

- ACPR at 600 kHz = –73 dBc

Typical CW performance at 940 MHz, 28 V

- Output power at P–1dB = 32 W

- Linear gain (1 W) = 31 dB

- Power added efficiency = 46%

Capable of handling 10:1 VSWR @ 28 V, 30 W

(CW) output power

Integrated ESD protection. Meets HBM Class 1B

(minimum), per JESD22-A114F

RoHS-compliant package

Gain

-5

-10

-15

Return Loss (dB)

Gain (dB)

•

Return Loss

-20

-25

700 750 800 850 900 950 1000 1050 1100

•

Frequency (MHz)

RF Characteristics

GSM/EDGE Measurements

(not subject to production test—verified by design/characterization in Infineon test fixture)

= 28 V, I

DQ1

= 120 mA, I

DQ2

= 280 mA, ƒ = 920 to 960 MHz, P

OUT

= 15 W Avg.

Characteristic

Gain

Power-added Efficiency

Error Vector Magnitude

Symbol

PAE

EVM (RMS)

Min

—

Typ

1.7

Max

—

Unit

All published data at T

CASE

= 25°C unless otherwise indicated

ESD:

Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 11

Rev. 05.1, 2010-11-09

PTMA080152M Related Products

	PTMA080152M	PTMA080152M_10
Description	Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz	Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz

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