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SIGC06T60G_05

Description
IGBT3 Chip
File Size81KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Compare View All

SIGC06T60G_05 Overview

IGBT3 Chip

SIGC06T60G
IGBT Chip
FEATURES:
600V Trench & Field Stop technology
low V
CE(sat)
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
3
This chip is used for:
power module
discrete components
Applications:
drives
white goods
resonant applications
C
G
E
Chip Type
SIGC06T60G
V
CE
600V
I
Cn
10A
Die Size
2.44 x 2.42 mm
2
Package
sawn on foil
Ordering Code
Q67050-
A4344-A101
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
2.44 x 2.42
1.558 x 1.577
0.361 x 0.513
5.9 / 3.6
70
150
0
2485 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
mm
µm
mm
deg
2
mm
2
Edited by INFINEON Technologies AI PS DD CLS, L7521A, Edition 2, 27.01.2005

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