2N7002T
Elektronische Bauelemente
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
FEATURES
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
DEVICE MARKING：K72
Drain
REF.
A
B
C
D
G
J
Gate
Millimeter
Min.
Max.
1.50
1.70
0.75
0.95
0.60
0.80
0.23
0.33
0.50BSC
0.10
0.20
REF.
K
M
N
S
Millimeter
Min.
Max.
0.30
0.50
o
---
10
o
---
10
1.50
1.70
Source
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise specified)
PARAMETER
Drain-Source Voltage
Drain Current
Power Dissipation
Operating Junction Temperature Range
Operating Storage Temperature Range
SYMBOL
V
DS
I
D
P
D
T
J
T
STG
RATING
60
115
150
150
-55~150
UNIT
V
mA
mW
°C
°C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jun-2010 Rev. B
Page 1 of 3
2N7002T
Elektronische Bauelemente
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
CHARACTERISTICS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
SYMBOL MIN TYP MAX UNIT
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
60
1
-
-
500
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
±80
80
-
7.5
Ω
1
7.5
500
3.75
V
0.05
0.375
1.2
50
25
5
pF
V
mS
V
V
nA
nA
mA
TEST CONDITIONS
V
GS
= 0V, I
D
= 10μA
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 0V, V
GS
= ±25V
V
DS
= 60V, V
GS
= 0V
V
GS
= 10V, V
DS
= 7V
V
GS
= 10V, I
D
= 500mA
V
GS
= 5V, I
D
= 50mA
V
DS
= 10V, I
D
= 200mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 5V, I
D
= 50mA
I
S
= 115mA, V
GS
= 0V
Drain-Source On Resistance
R
DS(ON)
Forward transfer admittance
gfs
80
0.5
Drain-Source On Voltage
V
DS(ON)
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
SD
C
iss
C
oss
C
rss
0.55
-
-
-
V
DS
= 25V, V
GS
= 0V, f= 1MHz
SWITCHING TIME
Turn-On Time
T
d(ON)
-
-
20
nS
Turn-Off Time
T
d(OFF)
-
-
40
R
L
= 50Ω
V
GEN
= 10V, V
DD
= 25V,
I
D
= 500mA, R
G
= 25Ω,
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jun-2010 Rev. B
Page 2 of 3
2N7002T
Elektronische Bauelemente
N-Channel Enhancement MOSFET
TYPICAL CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jun-2010 Rev. B
Page 3 of 3
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