EEWORLDEEWORLDEEWORLD

Part Number

Search

2SA684

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size747KB,4 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SA684 Overview

RF SMALL SIGNAL TRANSISTOR

2SA684 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, PLASTIC, TO-92L, 3 PIN
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
2SA684
Elektronische Bauelemente
-1A , -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Automatic insertion by radial taping possible.
Complementary pair with 2SC1384L.
G
H
TO-92L
1
Emitter
2
Collector
3
Base
J
A
D
CLASSIFICATION OF h
FE
Product-Rank
Range
2SA684-Q
85~170
2SA684-R
120~240
2SA684-S
170~340
K
B
REF.
A
B
C
D
E
F
G
H
J
K
E
C
F
Millimeter
Min.
Max.
4.70
5.10
7.80
8.20
13.80
14.20
3.70
4.10
0.35
0.55
0.35
0.45
1.27 TYP.
1.28
1.58
2.44
2.64
0.60
0.80
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-60
-50
-5
-1
1
150, -55~150
Unit
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
f
T
C
Ob
Min.
-60
-50
-5
-
85
50
-
-
-
-
Typ.
-
-
-
-
Max.
-
-
-
-0.1
340
Unit
V
V
V
µA
Test Conditions
I
C
= -10µA, I
E
=0
I
C
= -2mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -20V, I
E
=0
V
CE
= -10V, I
C
= -500mA
V
CE
= -5V, I
C
= -1A
-
-0.2
-0.85
200
20
-
-0.4
-1.2
-
30
V
V
MHz
pF
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -10V, I
E
=50mA , f=200MHz
V
CB
= -10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2011 Rev. B
Page 1 of 3

2SA684 Related Products

2SA684 2SA684_11
Description RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR
Could you please help me find out which of these two embedded courses is better? Thank you!
I want to go for embedded training. I have seen many training courses and chose these two. However, I don’t understand the specific knowledge of embedded. I beg you to help me! Thank you here! ! ! Fir...
zgfjcc Embedded System
What are the turn-on voltage Vt and pinch-off voltage Vp of a field effect transistor? In the output characteristics of the field effect transistor shown in Figures 1.3.3 (a) and (b),
answer: For an enhanced insulated gate field effect transistor (MOSFET), there is no conductive channel at Vgs0, and there is a drain current Id only when Vgs reaches the turn-on voltage V. Therefore,...
fighting Analog electronics
Looking for the installation software of IAR V5.30
I have searched for version 5.30 on the Internet for a long time but couldn't find it. I only have a cracker. Can anyone provide me with a V5.30 installation software?...
lai430zhuce Microcontroller MCU
2440 bare metal interrupt and MMU problem, please help me analyze it, thank you in advance
I am debugging the interruption of a bare-metal 2440 running in SDRAM. According to my understanding, in order to enter the interruption in SDRAM, the MMU must be enabled so that the memory address 0x...
krg_07 Embedded System
【Low Power】Design of Low Power Test Generator Based on FPGA
Design of Low Power Test Generator Based on FPGA...
常见泽1 FPGA/CPLD
TI seems to have a DCDC switching power supply verification platform, which is controlled by DSP and can achieve voltage boost or voltage reduction by controlling different NMOS.
It is a reference design, someone has posted it,It is a digital power supply with multiple NMOS, using DSP to control different NMOS to achieve different topologiesI forgot it now, I wonder if anyone ...
whuer TI Technology Forum

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 698  857  2174  1630  224  15  18  44  33  5 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号