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FRE160R3

Description
Power Field-Effect Transistor, 41A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size57KB,1 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

FRE160R3 Overview

Power Field-Effect Transistor, 41A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN

FRE160R3 Parametric

Parameter NameAttribute value
MakerHarris
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresRADIATION HARDENED
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)41 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-258AA
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Transistor component materialsSILICON
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