FRE260H1 datasheet, PDF - EEWORLD Datasheet

FRE260H1: Description31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size58KB，1 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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FRE260H1 Overview

31A, 200V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, TO-258, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Parts packaging code	TO-258AA
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	RADIATION HARDENED
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	31 A
Maximum drain-source on-resistance	0.08 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-258AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	150 W
Maximum pulsed drain current (IDM)	93 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Transistor component materials	SILICON

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