FRF150H datasheet, PDF - EEWORLD Datasheet

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FRF150H: Description25A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA; CategoryDiscrete semiconductor The transistor; File Size49KB，6 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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FRF150H Overview

25A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

FRF150H Parametric

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
Parts packaging code	TO-254AA
package instruction	FLANGE MOUNT, R-MSFM-P3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.07 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	75 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

FRF150H Preview

FRF150D, FRF150R,

FRF150H

June 1998

25A, 100V, 0.07 Ohm, Rad Hard,

N-Channel Power MOSFETs

Package

TO-254AA

Features

• 25A, 100V, RDS(on) = 0.07Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

Performance Permits Limited Use to 3000KRAD(Si)

Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

Survives 2E12 Typically If Current Limited to IDM

7.0nA Per-RAD(Si)/sec Typically

Pre-RAD Speciﬁcations for 3E13 Neutrons/cm

Usable to 3E14 Neutrons/cm

• Gamma Dot

• Photo Current

• Neutron

Description

The Intersil Corporation has designed a series of SECOND GENERATION hard-

ened power MOSFETs of both N and P channel enhancement types with ratings

from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose

hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness

ranging from 1E13n/cm

for 500V product to 1E14n/cm

for 100V product. Dose

rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and

2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n

)

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired

deviations from the data sheet.

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

Symbol

Absolute Maximum Ratings

(TC = +25

C) Unless Otherwise Speciﬁed

FRF150D, R, H

100

±20

125

1.00

-55 to +150

300

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Intersil Corporation 1999

File Number

3215.1

4-1

FRF150D, FRF150R, FRF150H

Pre-Radiation Electrical Speciﬁcations

TC = +25

C, Unless Otherwise Speciﬁed

LIMITS

PARAMETER

Drain-Source Breakdown Volts

Gate-Threshold Volts

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero-Gate Voltage

Drain Current

Rated Avalanche Current

Drain-Source On-State Volts

Drain-Source On Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate-Charge Threshold

Gate-Charge On State

Gate-Charge Total

Plateau Voltage

Gate-Charge Source

Gate-Charge Drain

Diode Forward Voltage

Reverse Recovery Time

Junction-To-Case

Junction-To-Ambient

SYMBOL

BVDSS

VGS(th)

IGSSF

IGSSR

IDSS1

IDSS2

IDSS3

IAR

VDS(on)

RDS(on)

td(on)

td(off)

QG(th)

QG(on)

QGM

VGP

QGS

QGD

VSD

Rθjc

Rθja

Free Air Operation

ID = 25A, VGD = 0

I = 25A; di/dt = 100A/µs

VDD = 50V, ID = 25A

IGS1 = IGS2

≤

VGS

≤

TEST CONDITIONS

VGS = 0, ID = 1mA

VDS = VGS, ID = 1mA

VGS = +20V

VGS = -20V

VDS = 100V, VGS = 0

VDS = 80V, VGS = 0

VDS = 80V, VGS = 0, TC = +125

Time = 20µs

VGS = 10V, ID = 25A

VGS = 10V, ID = 20A

VDD = 50V, ID = 25A

Pulse Width = 3µs

Period = 300µs, Rg = 25Ω

≤

VGS

≤

10 (See Test Circuit)

MIN

100

2.0

138

0.6

MAX

4.0

100

0.025

0.25

1.84

.07

134

628

642

490

314

552

164

1.8

1400

1.0

C/W

UNITS

Ω

ELECTRONIC SWITCH OPENS

WHEN I

IS REACHED

= 12V

DUT

CURRENT I

TRANSFORMER

VARY t

TO OBTAIN

REQUIRED PEAK I

≤

20V

50Ω

DUT

50Ω

50V-150V

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT

FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

4-2

FRF150D, FRF150R, FRF150H

Post-Radiation Electrical Speciﬁcations

TC = +25

C, Unless Otherwise Speciﬁed

LIMITS

PARAMETER

Drain-Source

Breakdown Volts

(Note 4, 6)

(Note 5, 6)

Gate-Source

Threshold Volts

(Note 4, 6)

(Note 3, 5, 6)

Gate-Body

Leakage Forward

(Note 4, 6)

(Note 5, 6)

Gate-Body

Leakage Reverse

(Note 2, 4, 6)

(Note 2, 5, 6)

Zero-Gate Voltage

Drain Current

(Note 4, 6)

(Note 5, 6)

Drain-Source

On-State Volts

(Note 1, 4, 6)

(Note 1, 5, 6)

Drain-Source

On Resistance

(Note 1, 4, 6)

(Note 1, 5, 6)

NOTES:

1. Pulse test, 300µs max

2. Absolute value

3. Gamma = 300KRAD(Si)

4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13

5. Gamma = 1000KRAD(Si). Neutron = 3E13

6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS

7. Gamma data taken 11/16/89 on TA 17651 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,

PA 19401

8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989

9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988

SYMBOL

BVDSS

VGS(th)

IGSSF

IGSSR

IDSS

VDS(on)

RDS(on)

TYPE

FRF150D, R

FRF150H

FRF150D, R

FRF150H

FRF150D, R

FRF150H

FRF150D, R

FRF150H

FRF150D, R

FRF150H

FRF150D, R

FRF150H

FRF150D, R

FRF150H

TEST CONDITIONS

VGS = 0, ID = 1mA

VGS = VDS, ID = 1mA

VGS = 20V, VDS = 0

VGS = -20V, VDS = 0

VGS = 0, VDS = 80V

VGS = 10V, ID = 25A

VGS = 16V, ID = 25A

VGS = 10V, ID = 20A

VGS = 14V, ID = 20A

MIN

100

2.0

1.5

MAX

4.0

4.5

100

200

100

200

100

1.84

2.76

0.07

0.105

UNITS

µA

Ω

4-3

FRF150D, FRF150R, FRF150H

Typical Performance Characteristics

4-4

FRF150D, FRF150R, FRF150H

Rad Hard Data Packages - Intersil Power Transistors

TXV Equivalent

1. Rad Hard TXV Equivalent - Standard Data Package

A. Certiﬁcate of Compliance

B. Assembly Flow Chart

C. Preconditioning - Attributes Data Sheet

D. Group A

E. Group B

F. Group C

G. Group D

- Attributes Data Sheet

E. Preconditioning Attributes Data Sheet

Hi-Rel Lot Traveler

HTRB - Hi Temp Gate Stress Post Reverse

Bias Data and Delta Data

HTRB - Hi Temp Drain Stress Post Reverse

Bias Delta Data

F. Group A

G. Group B

H. Group C

I. Group D

- Attributes Data Sheet

2. Rad Hard TXV Equivalent - Optional Data Package

A. Certiﬁcate of Compliance

B. Assembly Flow Chart

C. Preconditioning - Attributes Data Sheet

- Precondition Lot Traveler

- Pre and Post Burn-In Read and Record

Data

D. Group A

E. Group B

- Attributes Data Sheet

- Group A Lot Traveler

- Attributes Data Sheet

- Group B Lot Traveler

- Pre and Post Read and Record Data for

Intermittent Operating Life (Subgroup B3)

- Bond Strength Data (Subgroup B3)

- Pre and Post High Temperature Operating

Life Read and Record Data (Subgroup B6)

- Attributes Data Sheet

- Group C Lot Traveler

- Pre and Post Read and Record Data for

Intermittent Operating Life (Subgroup C6)

- Bond Strength Data (Subgroup C6)

- Attributes Data Sheet

- Group D Lot Traveler

- Pre and Post RAD Read and Record Data

2. Rad Hard Max. “S” Equivalent - Optional Data Package

A. Certiﬁcate of Compliance

B. Serialization Records

C. Assembly Flow Chart

D. SEM Photos and Report

E. Preconditioning - Attributes Data Sheet

- Hi-Rel Lot Traveler

- HTRB - Hi Temp Gate Stress Post

Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post

Reverse Bias Delta Data

- X-Ray and X-Ray Report

F. Group A

- Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups A2, A3, A4, A5 and A7 Data

- Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups B1, B3, B4, B5 and B6 Data

- Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups C1, C2, C3 and C6 Data

- Attributes Data Sheet

- Hi-Rel Lot Traveler

- Pre and Post Radiation Data

G. Group B

F. Group C

H. Group C

G. Group D

I. Group D

Class S - Equivalents

1. Rad Hard “S” Equivalent - Standard Data Package

A. Certiﬁcate of Compliance

B. Serialization Records

C. Assembly Flow Chart

D. SEM Photos and Report

4-5

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

FRF150H Related Products

	FRF150H	FRF150D	FRF150R
Description	25A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA	25A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA	25A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
Parts packaging code	TO-254AA	TO-254AA	TO-254AA
package instruction	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V
Maximum drain current (ID)	25 A	25 A	25 A
Maximum drain-source on-resistance	0.07 Ω	0.07 Ω	0.07 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	75 A	75 A	75 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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