FRF450R2 datasheet, PDF - EEWORLD Datasheet

FRF450R2: DescriptionPower Field-Effect Transistor, 9A I(D), 500V, 0.615ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA; CategoryDiscrete semiconductor The transistor; File Size143KB，4 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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FRF450R2 Overview

Power Field-Effect Transistor, 9A I(D), 500V, 0.615ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	unknown
Other features	RADIATION HARDENED
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	9 A
Maximum drain current (ID)	9 A
Maximum drain-source on-resistance	0.615 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	27 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Maximum off time (toff)	980 ns
Maximum opening time (tons)	344 ns

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