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1N3899

Description
20 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size112KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N3899 Overview

20 A, 50 V, SILICON, RECTIFIER DIODE

1N3899 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-5
package instructionO-MUPM-D1
Contacts1
Reach Compliance Codecompliant
Is SamacsysN
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeDO-203AB
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current225 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current20 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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