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1N945A

Description
11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size130KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N945A Overview

11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35

1N945A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-7
package instructionO-LALF-W2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-204AA
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage11.7 V
surface mountNO
technologyZENER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Voltage temperatureCoeff-Max0.0585 mV/°C
Maximum voltage tolerance5%
Base Number Matches1
• 1N941B, 1N943B, 1N944B AND 1N945B AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/157
• 1N941B-1, 1N943B-1, 1N944B-1 AND 1N945B-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/157
• 11.7 VOLT NOMINAL ZENER VOLTAGE
• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
• METALLURGICALLY BONDED
1N941 thru 1N945B
and
1N941B-1 thru 1N945B-1
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
l
R
= 15
µ
A @ 25°C & V
R
= 8 Vdc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise speci½ed.
JEDEC
TYPE
NUMBER
ZENER
VOLTAGE
v @I
z
ZT
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
VOLTAGE
TEMPERATURE
EFFECTIVE
ZENER
TEMPERATURE
RANGE
TEMPERATURE
IMPEDANCE
STABILITY
COEFFICIENT
ZZT
³V
ZT
MAXIMUM
(Note 1)
(Note 2)
mV
88
181
239
44
90
120
18
36
47
9
18
24
4
9
12
°C
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +150
-55 to +150
% / °C
0.01
0.01
0.01
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
0.0005
VOLTS
1N941
1N941A
1N941B
1N942
1N942A
1N942B
1N943
1N943A
1N943B
1N944
1N944A
1N944B
1N945
1N945A
1N945B
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12 -12.28
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
OHMS
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
NOTE 1
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to
10% of lZT.
NOTE 2
The maximum allowable change observed over the entire temperature range i.e., the
diode voltage will not exceed the speci½ed mV at any discrete temperature between
the established limits, per JEDEC standard No.5.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
21

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Description 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA FRED 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-7 FRED 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-7 FRED 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35
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