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BAS516S

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size135KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

BAS516S Overview

SIGNAL DIODE

BAS516S Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
BAS516S
Elektronische Bauelemente
RoHS Compliant Product
Surface Mount Switching Diode
FEATURES
High speed switching
High reliabilty
.
.
.
.
.
A suffix of "-C" specifies halogen & lead-free
SOD-523
CATHODE MARK
MECHANICAL DATA
Extremely small surface mounting type. (EMD2)
High speed. (trr=4ns type.)
Silicon epitaxial planer
1.2±0.05
1.6±0.1
0.3±0.05
0.12±0.05
Marking: 61
0.8±0.05
0.6±0.1
Dimensions in millimeters
MAXIMUM RATINGS
(TJ = 25
unless otherwise noted)
Rating
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward current
Surge current (1s)
Junction Temperature
S t o r a g e Te m p e r a t u r e R a n g e
Symbol
V
RRM
VR
Io
I FM
I surge
TJ
Tstg
Value
85
75
250
500
500
125
- 5 5 to +125
Unit
Volts
Volts
mA
mA
mA
ELECTRICAL CHARACTERISTICS
(TA = 25
)
Symbol
V
F
Parameter
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 75 V
V
R
=
25 V; Tj = 150°C
V
R
= 75 V; Tj = 150°C
;
C
d
t
rr
V
fr
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to IR = 10 mA;
R
L
= 100
Ω;
measured at IR = 1 mA; see Fig.7
when switched from I
F
= 10 mA; tr = 20 ns; see Fig.8
1.75
V
1
4
30
1
30
50
nA
µA
µA
µA
pF
n
s
715
855
1
1.25
mV
mV
V
V
Condition
Max.
Unit
http://www.SeCoSGmbH.com
l
Any changing of specification will not be informed individua
01-Jun-2002 Rev. A
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